2014
DOI: 10.1088/0022-3727/47/21/215203
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Oxidation states of GaAs surface and their effects on neutral beam etching during nanopillar fabrication

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Cited by 17 publications
(14 citation statements)
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“…The parameters of the SRIM calculation are listed elsewhere 48 Table 1: Parameters used for the SRIM calculations. a-C:H layer is modelled with a density of 2.2 g/cm 3 . The type of calculation used is "Surface sputtering / Monolayer Collision Steps".…”
Section: Modellingmentioning
confidence: 99%
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“…The parameters of the SRIM calculation are listed elsewhere 48 Table 1: Parameters used for the SRIM calculations. a-C:H layer is modelled with a density of 2.2 g/cm 3 . The type of calculation used is "Surface sputtering / Monolayer Collision Steps".…”
Section: Modellingmentioning
confidence: 99%
“…Negative-ion (NI) production in low-pressure plasma has many applications and is studied in various areas, such as microelectronics 1,2,3,4,5,6 , magnetically confined fusion 7,8 , space propulsion 9,10,11 and sources for particle accelerators 12,13,14 . NI in low pressure plasmas are usually created by dissociative attachment of electrons on molecules (volume production) 15,16,17 , but they can also be created on surfaces by the bombardment of positive ions or hyperthermal neutrals 18,19,20,21,22,23,24 .…”
Section: Introductionmentioning
confidence: 99%
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“…Negativeoxygen-ion sources for secondary ion mass spectrometry operate by volume production. While plasma thrusters for space propulsion [14][15][16] and microelectronics etching plasmas [17][18][19][20][21][22] currently rely on volume production, they may also benefit in future from utilising surface production.…”
Section: Introductionmentioning
confidence: 99%
“…Recently, we have achieved InGaN/GaN single quantum nanodisk blue emission by using fusion nanoprocessing of an iron oxide core and ferritin protein particles and damageless plasma neutral beam etching. − The optical properties of InGaN/GaN QNDs have not been fully studied yet since the higher indium content in the c -plane SQW could result in lower emission efficiency due to the strong QCSE. In this study, we present InGaN/GaN QNDs with enhanced emission intensity properties and analyze their characteristics using temperature-dependent PL, time-resolved PL, and a theoretical simulation using three-dimensional finite difference methods…”
mentioning
confidence: 99%