Oxidative annealing of ZnSe/GaAs heterostructures

Maksimov, O.

doi:10.1016/j.matlet.2008.05.024

Cited by 4 publications

(2 citation statements)

References 40 publications

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“…In the past few years, ZnGa 2 O 4 nanowires and thin films have been synthesized using various methods such as solid-state reaction [ 7 , 15 , 16 ], sputtering [ 8 ], sol–gel processing [ 17 ], electrophoresis [ 18 ], pulsed laser deposition [ 19 ], thermal evaporation [ 20 , 21 ], and chemical vapor deposition [ 22 - 26 ]. However, the synthesis of hierarchical ZnGa 2 O 4 nanostructures has not been investigated yet.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of ZnGa2O4 Hierarchical Nanostructure by Au Catalysts Induced Thermal Evaporation

et al. 2010

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In this paper, ZnGa2O4 hierarchical nanostructures with comb-like morphology are fabricated by a simple two-step chemical vapor deposition (CVD) method: first, the Ga2O3 nanowires were synthesized and employed as templates for the growth of ZnGa2O4 nanocombs; then, the as-prepared Ga2O3 nanowires were reacted with ZnO vapor to form ZnGa2O4 nanocombs. Before the reaction, the Au nanoparticles were deposited on the surfaces of Ga2O3 nanowires and used as catalysts to control the teeth growth of ZnGa2O4 nanocombs. The as-prepared ZnGa2O4 nanocombs were highly crystallized with cubic spinel structure. From the photoluminescence (PL) spectrum, a broad band emission in the visible light region was observed of as-prepared ZnGa2O4 nanocombs, which make it promising application as an optical material.

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Section: Introductionmentioning

confidence: 99%

Synthesis of ZnGa2O4 Hierarchical Nanostructure by Au Catalysts Induced Thermal Evaporation

et al. 2010

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“…However, an alternative route to ZnO is to use the ZnSe or ZnS microwires as templates that can be oxidized. Annealing of ZnSe in an oxygen ambient (1 atm) at 800–1000 ° C results in conversion to ZnO via the following reaction:51 …”

Section: Resultsmentioning

confidence: 99%

Conformal Coating by High Pressure Chemical Deposition for Patterned Microwires of II–VI Semiconductors

Sparks

Healy

et al. 2012

Adv Funct Materials

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Deposition techniques that can uniformly and conformally coat deep trenches and very high aspect ratio pores with uniform thickness fi lms are valuable in the synthesis of complex three-dimensionally structured materials. Here it is shown that high pressure chemical vapor deposition can be used to deposit conformal fi lms of II-VI semiconductors such as ZnSe, ZnS, and ZnO into high aspect ratio pores. Microstructured optical fi bers serve as tailored templates for the patterning of II-VI semiconductor microwire arrays of these materials with precision and fl exibility. In this way, centimeters-long microwires with exterior surfaces that conform well to the nearly atomically smooth silica templates can be fabricated by conformal coating. This process allows for II-VI semiconductors, which cannot be processed into optical fi bers with conventional techniques, to be fabricated into step index and microstructured optical fi bers.

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Synthesis of ZnGa2O4 nanowires with β-Ga2O3 templates and its photoluminescence performance

Zhou

Chen

et al. 2009

Materials Letters

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Oxidative annealing of ZnSe/GaAs heterostructures

Cited by 4 publications

References 40 publications

Synthesis of ZnGa2O4 Hierarchical Nanostructure by Au Catalysts Induced Thermal Evaporation

Synthesis of ZnGa2O4 Hierarchical Nanostructure by Au Catalysts Induced Thermal Evaporation

Conformal Coating by High Pressure Chemical Deposition for Patterned Microwires of II–VI Semiconductors

Synthesis of ZnGa2O4 nanowires with β-Ga2O3 templates and its photoluminescence performance

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