2024
DOI: 10.1039/d4nh00057a
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Oxide and 2D TMD semiconductors for 3D DRAM cell transistors

Jae Seok Hur,
Sungsoo Lee,
Jiwon Moon
et al.

Abstract: As the scaling of conventional dynamic random-access memory (DRAM) has reached its limits, 3D DRAM has been proposed as a next-generation DRAM cell architecture. However, incorporating silicon into 3D DRAM...

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