Oxide and 2D TMD semiconductors for 3D DRAM cell transistors
Jae Seok Hur,
Sungsoo Lee,
Jiwon Moon
et al.
Abstract:As the scaling of conventional dynamic random-access memory (DRAM) has reached its limits, 3D DRAM has been proposed as a next-generation DRAM cell architecture. However, incorporating silicon into 3D DRAM...
Silicon transistor miniaturization has hit a limit, constraining further semiconductor advancements. ALD-derived oxide semiconductors enable 3D vertical integration, providing a route to higher integration density without continued scaling down.
Silicon transistor miniaturization has hit a limit, constraining further semiconductor advancements. ALD-derived oxide semiconductors enable 3D vertical integration, providing a route to higher integration density without continued scaling down.
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