Oxide damage by ion implantation in silicon

Abstract

Secondary ion mass spectrometry characterization of source/drain junctions for strained silicon channel metal-oxide-semiconductor field-effect transistors

Thermally stimulated luminescence of Ce and Tb doped SiO2 sol–gel glasses

“…The intrinsic nature of traps responsible for TSL is confirmed by the previous observation of similar structures in the TSL of pure bulk silica and of several kinds of oxides obtained by thermal growth, by chemical vapor deposition, or by oxygen implantation in silicon [9][10][11].…”

“…The present study, dealing with TSL in a very wide temperature range and taking advantage of intense TSL signals provided by the presence of luminescent activators, represents an extension of the previously mentioned investigations and confirms the common and intrinsic nature of traps in different silica forms. The very clear hole nature of the recombination centers in our samples demonstrates that electron traps are involved in the TSL processes in SiO 2 ; oxygen deficient centers seem the most probable candidates to act as electron traps in the material, as already proposed and discussed in the past in the case of pure SiO 2 [10,11]. In fact, in several materials, anion vacancies can be responsible for electron trapping in order to achieve local charge compensation.…”

Phosphorous implantation in silicon through thin SiO2 layers: Oxide damage and postoxidation thermal treatments

“…Intensity of the TSL signal obtained following x-ray irradiation on the SiO 2 layers of set C. Closed circles, unimplanted samples; closed squares, after P implantation ͑270 keV, 3ϫ10 12 ions/cm 2 ͒ and heating up to 400°C ͑first TSL run͒.X-ray dose ϭ 10 3 Gy. 8 Such origin is in agreement with the observed correlation of the TSL intensity to the nuclear contribution to the stopping power ͑which is of the same order of magnitude as the electronic contribution in the considered energy range͒, giving rise to ionic displacements and to the formation of oxygen vacancies and interstitials ͑Frenkel pairs͒ both in the bulk and at interfacial regions. The growth conditions of the layers are the following ͑see also Table III͒: 1 and 4, wet oxidation ϩ annealing at 900°C in N 2 O and N 2 , respectively; 2 and 5, first wet oxidation ϩ annealing at 1000°C in N 2 , second wet oxidation ϩ annealing at 900°C in N 2 O and N 2 , respectively; 3 and 6, as 2 and 5 ϩ a final annealing at 1000°C in N 2 .…”

“…Such an effect was not observed in analogous measurements performed on thicker oxides, 8 where higher fluences (2ϫ10 13 -2 ϫ10 14 ions/cm 2 ) and energies ͑700-3000 keV͒ were considered. Concerning the ER data, however, it is interesting to remark that for fluences lower than 10 13 ions/cm 2 , values lower than those of the unirradiated oxide are observed.…”

Implanted and irradiated SiO2∕Si structure electrical properties at the nanoscale

“…Therefore, many works have been devoted to this topic 1-3 in the last years. [13][14][15][16][17] In Ref. Other authors detected new phenomena such as the radiation induced leakage current ͑RILC͒, related to trap assisted tunnelling through the defects generated during the radiation.…”