Oxide Electrodes for Buried-Channel Field Effect Transistors

Abstract

In this paper we describe the fabrication of oxide based electrodes that allow epitaxial growth of multilayer structures used to fabricate buried oxide-channel field effect transistors. The distinct characteristic of our buried electrodes is that they provide an etch stop layer which allow the opening of vias through the gate oxide using chemical etching. They can be patterned to define 1μm channel lengths and exhibit low contact resistance with channel materials such as YxPr1−xBa2Cu3O7-σ (YPBCO) or YBa2Cu3O7σ (YBCO).