Oxide Electronics and Vanadium Dioxide Perspective: A Review

Abstract

-Metal-oxide-semiconductor field-effect transistors (MOSFET) have been for a long time the key elements of modern electronics industry. For the purpose of a permanent integration enhancement, the size of MOSFET has been decreasing exponentially for over decades in compliance with Moore's Law, but nowadays, owing to the intrinsic restrictions, the further scaling of MOSFET devices either encounters fundamental limits or demands for more and more sophisticated and expensive engineering solutions. Alternative approaches and device concepts are currently designed both in order to sustain an increase of the integration degree, and to improve the functionality and performance of electronic devices. Oxide electronics is one of such promising approaches which could enable and accelerate the development of information and computing technology. The behavior of delectrons in transition metal oxides is responsible for the unique properties of these materials, causing strong electronelectron correlations, which play an important role in the mechanism of metal-insulator transition. The Mott transition in vanadium dioxide is specifically the phenomenon that researchers consider as a corner stone of oxide electronics, particularly, in its special direction known as a Motttransition field-effect transistor (MTFET). This review focuses on current research, latest results, urgent problems and nearterm outlook of oxide electronics with special emphasis on the state of the art and recent progress in the field of VO 2 -based MTFETs.

Nonlinear Phenomena and Deterministic Chaos in Systems With Vanadium Dioxide

“…The origin of these electrical instabilities is usually closely linked to a negative differential resistance (NDR). In vanadium dioxide the switching effect with current-controlled NDR is caused by the electric-field-induced metal-insulator transition (MIT), which is stimulated by either thermal or electronic effects [1]. In equilibrium conditions, vanadium dioxide undergoes a metal-insulator phase transition at the transition temperature Tt = 340 K [2], and above Tt the conductivity abruptly increases by 4-5 orders of magnitude.…”

Improved terahertz modulation using germanium telluride (GeTe) chalcogenide thin films

“…10,11 Thin film VO 2 has an electronically induced metal-insulator transition (MIT) at 67 C and an associated decrease in electrical resistivity of three to four orders of magnitude. 12 The VO 2 transition, however, is volatile and requires applied electrical power and/or external heating to maintain its more conductive ON state. In addition, the material is somewhat onerous to deposit requiring stringent substrate heating and reactive deposition parameters.…”

Vanadium Oxide Gel Films: Optical and Electrical Properties, Internal Electrochromism and Effect of Doping

“…Furthermore, a number of vanadium oxides undergo metal-insulator transitions at different temperatures. For instance, vanadium dioxide at T < 340 K is a semiconductor; at T = Tt = 340 K the conductivity abruptly increases by four to five orders of magnitude, and above this transition temperature VO2 exhibits metallic properties [2].…”