Oxide ferromagnetic semiconductors: coatings and films

Нипан, Г. Д.; Stognij, A. I.; Ketsko, V. A.

doi:10.1070/rc2012v081n05abeh004251

Cited by 36 publications

(8 citation statements)

References 15 publications

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“…At present, the search for new materials and film heterostructures with both semiconductor and magnetic characteristics at temperatures above room temperature is conducted in two main directions [1][2][3].…”

Section: Basic Directions Of Search Of Materials and Film Structures mentioning

confidence: 99%

“…At the same time, it should be noted that the creation of heterostructures for microelectronic devices based on EuO is difficult due to the low Curie temperature (69.4 K) and the instability of the material in air. In [3], it is said that TC can be enhanced by dissolving samarium monoxide SmO or ytterbium YbO in EuO. Thus, the T S was increased to 130 K. However, the authors could not significantly raise the Curie temperature due to the fact that the solubility of the oxides SmO and YbO was not high enough (for example, for SmO it was 14 mol%).…”

Section: Basic Directions Of Search Of Materials and Film Structures mentioning

confidence: 99%

“…Based on the principles of isovalent substitution of cations in the structure, a solid solution Ga 1-x Mn x As (where x is up to 5%) was obtained, which had a higher Curie temperature of 170 K compared to EuO [3]. Such substances, which are characterized by a disordered distribution of impurity magnetic ions in the crystal structure, are called diluted magnetic semiconductors -DMS (diluted magnetic semiconductors).…”

Section: Basic Directions Of Search Of Materials and Film Structures mentioning

confidence: 99%

“…Interest in the creation of electronic devices containing ferrite films on semiconductor substrates increased significantly after the discovery of Mg(Fe 0.8 Ga 0.2 ) 2 O 4 magnetic semiconductors in the Mg-Fe-Ga-O system [3]. However, a significant disadvantage of both Mg(Fe 0.8 Ga 0.2 ) 2 O 4 and ferrites in general is the high (850-950°C) crystallization temperature, as well as the significant mismatch of the crystallographic parameters of their lattices with commercial semiconductors such as Si, GaN and GaAs.…”

Section: Magnetic Semiconductor Materials Based On Ferritesmentioning

confidence: 99%

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Problems of Creating Materials and Film Structures Based on Ferrits for Spintronics Devices

Кецко¹,

Смирнова²,

Kopieva³

et al. 2018

RENSIT

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The review presents the main directions of the search for materials and film structures based on them for spintronics devices, provides data on materials for these purposes available in the literature. The problems that need to be solved when creating spintronics structures are analyzed. A new method for the synthesis of ferrite films on semiconductor substrates without elastic stresses and unwanted interactions of components at the interface is presented. A method for the synthesis of powdered ferrites, based on burning the gel, characterized by phase homogeneity and dimensional unimodality, which makes it possible to use the material as a target for the synthesis of films, is considered. The prospects for the practical use of submicron films of ferrite garnets with a SiO 2 buffer layer on Si with a Hilbert damping parameter α ≈ 10-3 , which can be used in spin-wave device structures on silicon substrates, are considered.

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Section: Basic Directions Of Search Of Materials and Film Structures mentioning

confidence: 99%

Section: Basic Directions Of Search Of Materials and Film Structures mentioning

confidence: 99%

Section: Basic Directions Of Search Of Materials and Film Structures mentioning

confidence: 99%

Section: Magnetic Semiconductor Materials Based On Ferritesmentioning

confidence: 99%

See 2 more Smart Citations

Problems of Creating Materials and Film Structures Based on Ferrits for Spintronics Devices

Кецко¹,

Смирнова²,

Kopieva³

et al. 2018

RENSIT

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“…The manifestation of ferromagnetism with a Curie temperature exceeding room temperature in the anatase phase of Ti 1-x Co x O 2 oxide has not been explained to this day. Although the mechanisms of its possible manifestation have been widely discussed in the literature [8][9][10][11][12][13], nevertheless the values of the magnetic and electric characteristics observed for this composite are insufficient for its use in spintronics.…”

Section: Introductionmentioning

confidence: 99%

Europium monoxide as a basis for creating a high-temperature spin injector in the semiconductor spintronics

Borukhovich¹

2020

MoEM

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The results of the creation of a high-temperature spin injector based on EuO: Fe composite material are discussed. Their magnetic, electrical, structural and resonance parameters are given in a wide range of temperatures and an external magnetic field. A model calculation of the electronic spectrum of the solid solution Eu–Fe–O, responsible for the manifestation of the outstanding properties of the composite, is performed. The possibility of creating semiconductor spin electronics devices capable of operating at room temperature is shown.

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