2015
DOI: 10.1007/s11581-015-1518-8
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Oxide ion conductors based on niobium-doped bismuth vanadate: conductivity and phase transition features

Abstract: Oxide ion conductors are technologically important materials, essential for electrochemical devices such as oxygen separation membranes and solid oxide fuel cells (SOFCs). Bi 4 V 2−x Me x O 11−δ (BiMeVOx) is a well-known family of material with high ionic conductivity at low operating temperatures. However, it is often reported to possess three structurally related phase changes that affect the vacancy order/ disorder over the oxygen atom positions. This might be overcome by a careful chemical design of an oxi… Show more

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Cited by 14 publications
(7 citation statements)
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“…Particularly for the compositions, with the tragonal phase at room temperature, a steady shift towards lower 2θ, has been observed. This shifting of peak position indicates the lattice expansion due to the substitution of V by Al and Ti in the initial structure of the parent compound [28].…”
Section: Xrd Analysismentioning
confidence: 93%
“…Particularly for the compositions, with the tragonal phase at room temperature, a steady shift towards lower 2θ, has been observed. This shifting of peak position indicates the lattice expansion due to the substitution of V by Al and Ti in the initial structure of the parent compound [28].…”
Section: Xrd Analysismentioning
confidence: 93%
“…In fact, doping with appropriate ions and synthesizing it in a corresponding tuned chemical environment is one of the good strategies to overcome the limitations and hence enhancing the photocatalytic properties of BiVO 4 . There have been both experimental and theoretical works of BiVO 4 in the presence of defects and impurities, to understand such strategies. Theoretical predictions of such strategies and growth environment for the desired dopant in BiVO 4 can be an important tool to expedite the search process.…”
Section: Introductionmentioning
confidence: 99%
“…The electronic band gap of the compounds is evaluated with the help of diffuse reflectance UV visible spectra, where the band gap of CrVO 4 and rGO−CrVO 4 were found to be 2. 44…”
Section: Discussionmentioning
confidence: 99%
“…It is very clear from Figure that the quantum capacitance is higher for GO-supported CrVO 4 compared to pure CrVO 4 which supports our experimental data. Here, we point out that in experiment, we measure total capacitance, and for low-dimensional electrode, it is expressed as where C EDL is the EDLC which depends on electrode–electrolyte interfacial interaction. In Figure , we plot the partial density for Cr d orbital (lower panel), V d orbital, O p orbital, and C p orbital (upper panel) for (100) surface of CrVO 4 and GO + (100) surface of CrVO 4 .…”
Section: Theoretical Insight From Dft Simulationsmentioning
confidence: 99%
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