Oxide-semiconductor channel ferroelectric field-effect transistors for high-density memory applications: 3D NAND operation and the potential impact of in-plane polarization
Junxiang Hao,
Xiaoran Mei,
Takuya Saraya
et al.
Abstract:We have explored 3D NAND memory operation of oxide-semiconductor (OS) channel FeFETs by TCAD simulation with a multi-transistor NAND-string model. Key challenges in 3D NAND memory devices, such as (1) disturb from pass voltages (Vpass), (2) interference from neighboring wordlines (WLs), and (3) both conventional and self-boost program inhibit operation of unselected bitlines (BLs), are addressed. For a target device structure, operation voltages can be optimized to satisfy the requirement of (1)-(3). The stack… Show more
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