Oxide thickness variation induced threshold voltage fluctuations in decanano MOSFETs: a 3D density gradient simulation study

Asenov, A.; Kaya, Savaş; Davies, John H.; Saini, Subhash

doi:10.1006/spmi.2000.0955

Cited by 25 publications

(21 citation statements)

References 17 publications

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“…1, have been reconstructed starting from an autocorrelation function with a given correlation length ( ) and rms height ( ) [5]. In the Fourier domain, the magnitude of elements of a two-dimensional (2-D) complex array representing the height function is determined from the spectral information, while the phase is selected at random, imposing necessary symmetries.…”

Section: B Random Interface Generationmentioning

confidence: 99%

“…The gate oxide thickness in 20-nm Intel devices [1], for example, is composed of only three silicon atomic layers. An interface roughness of even one layer then would have major implications for device electrostatistics [5] as well as transport adjacent to the Si-SiO interface [6]. In particular, there is no clarification as to whether the random nature of the oxide interface can pose a significant threat to the universal mobility behavior [7]- [9], which has proved very useful in commercial device simulators used in conventional Si CMOS designs.…”

Section: Introductionmentioning

confidence: 99%

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Breakdown of universal mobility curves in sub-100-nm MOSFETs

Kaya

Asenov²,

Roy³

2002

IEEE Trans. Nanotechnology

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We explore the breakdown of universal mobility behavior in sub-100-nm Si MOSFETs, using a novel three-dimensional (3-D) statistical simulation approach. In this approach, carrier trajectories in the bulk are treated via 3-D Brownian dynamics, while the carrier-interface roughness scattering is treated using a novel empirical model. Owing to the high efficiency of the transport kernel, effective mobility in 3-D MOSFETs with realistic Si-SiO 2 interfaces reconstructed from a Gaussian or exponential correlation function can be simulated in a statistical manner. We first demonstrate a practical calibration procedure for the interface mobility and affirm the universal behavior in the long channel limit. Next, effective mobility in ensembles of MOSFETs with a gate length down to 10 nm is investigated. It is found that the random-discrete nature of the Si-SiO 2 interface leads to a distribution of carrier mobility below the interface, which can deviate considerably from universal mobility curves when gate 63, where 3 is the correlation length for the SiO 2 interface.

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Section: B Random Interface Generationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Breakdown of universal mobility curves in sub-100-nm MOSFETs

Kaya

Asenov²,

Roy³

2002

IEEE Trans. Nanotechnology

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“…The quantum drift-diffusion model has the advantage that well-established numerical methods developed for the classical drift-diffusion equations can be adopted. It is widely employed in the engineering community (see, e.g., [4,35,37]) and it is implemented in commercial device simulators like ISE and Silvaco. Moreover, it describes the correct behavior of quantum confinement and tunneling effects in MOSFET (metal-oxide semiconductor field-effect transistor) structures [1,3].…”

Section: Introductionmentioning

confidence: 99%

A finite-volume scheme for the multidimensional quantum drift-diffusion model for semiconductors

Chainais-Hillairet

Gisclon

Jüngel

2010

Numer. Methods Partial Differential Eq.

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Abstract. A finite-volume scheme for the stationary unipolar quantum drift-diffusion equations for semiconductors in several space dimensions is analyzed. The model consists of a fourth-order elliptic equation for the electron density, coupled to the Poisson equation for the electrostatic potential, with mixed Dirichlet-Neumann boundary conditions. The numerical scheme is based on a Scharfetter-Gummel type reformulation of the equations. The existence of a sequence of solutions to the discrete problem and its numerical convergence to a solution to the continuous model are shown. Moreover, some numerical examples in two space dimensions are presented.

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“…It was employed for the simulation of many quantum semiconductor devices and has proved its numerical efficiency, especially in several space dimensions. [9,8,13,66] Due to its numerical robustness it is already integrated in the 2d/3d PROPHET simulation code from Lucent Technologies. Encouraging comparisons with Schro¨dinger-Poisson simulations can be found in Refs.…”

Section: Introductionmentioning

confidence: 99%

A Review on the Quantum Drift Diffusion Model

Pinnau

2002

Transport Theory and Statistical Physics

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We consider the quantum drift diffusion model for semiconductor devices and collect recent results on the stationary and transient equations. The stationary model including generation-recombination terms is studied for bipolar devices and the transient equations are considered in the unipolar case. We cover several topics, such as existence and uniqueness of solutions, asymptotic limits and convergence of a nonlinear iteration scheme in the stationary case as well convergence of a positivity preserving semidiscretization of the transient equations and the linear stability of stationary states.

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Oxide thickness variation induced threshold voltage fluctuations in decanano MOSFETs: a 3D density gradient simulation study

Cited by 25 publications

References 17 publications

Breakdown of universal mobility curves in sub-100-nm MOSFETs

Breakdown of universal mobility curves in sub-100-nm MOSFETs

A finite-volume scheme for the multidimensional quantum drift-diffusion model for semiconductors

A Review on the Quantum Drift Diffusion Model

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