Oxide vacancy passivation through interface engineering of Tetraphenylethylene-Based Small-Molecule with sulfonate functional group for efficient organic photodetector

Jang, Woongsik; Rehman, Zia Ur; Haris, Muhammad; Cho, Jae Sang; Lim, Ji Hyun; Kim, Min Soo; Lee, Jong‐Cheol; Lee, Hang Ken; Wang, Dong Hwan

doi:10.1016/j.cej.2023.144847

Cited by 5 publications

(2 citation statements)

References 54 publications

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“…Under this flow, we evaluated the responsivity and detectivity of the OPDs for incident optical power under operating conditions. The responsivity ( R ) was obtained according to the following equation: 30 R = J ph / L in where J Ph and L in denote the photocurrent density and incident light intensity, respectively.…”

Section: Resultsmentioning

confidence: 99%

“…The SNR typically quantifies the ability of a device to extract meaningful signals from the background noise. This relationship is typically expressed using the following equation: 30 SNR = 20(log( V signal / V noise ))where, V signal and V noise represent the magnitudes of the output signal and noise, respectively. We employed an optical signal with a frequency of 1000 Hz, and the frequency-dependent photocurrent generated by the OPDs was computed using the fast Fourier Transform, as illustrated in Fig.…”

Section: Resultsmentioning

confidence: 99%

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Efficient noise suppression via controlling the optical cavity in near-infrared organic photoplethysmography sensors

Yang,

Kim,

Jang

et al. 2024

J. Mater. Chem. C

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Efficient noise suppression via controlling the optical cavity in near-infrared organic photoplethysmography sensors

Yang,

Kim,

Jang

et al. 2024

J. Mater. Chem. C

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Enhancing Detection Frequency and Reducing Noise Through Continuous Structures via Release‐Controlled Transfer Toward Light‐Based Wireless Communication

Jang,

Luong,

Kim

et al. 2024

Advanced Materials

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Organic photodetectors (OPDs) have received considerable attention owing to their superior absorption coefficient and tunable bandgap. The introduction of bulk‐heterojunction (BHJ) structure aims to maximize charge generation, however, its response speed is constrained by the random distribution of donor and acceptor. Herein, a multiple‐active layer design consisting of a single acceptor layer and a bulk‐heterojunction layer (A/BHJ structure) is introduced, which combines the benefits of both the planar junction and the BHJ, improving photo‐sensing. A transfer process is employed for this structure, which involves calculating the energy release rate at each interface, considering temperature and velocity. Consequently, the OPD with the A/BHJ structure is successfully fabricated through transfer printing, resulting in reduced dark current, superior detectivity (1.06 × 1013 Jones), and rapid response, achieved by creating a high hole injection barrier and suppressing trap sites within the interfaces. By thoroughly investigating charge dynamics in the structure, the A/BHJ structure‐based OPD attains large bandwidth detection with high signal‐to‐noise. An efficient wireless data communication system with digital‐to‐analog conversion is showcased using the A/BHJ structure‐based OPD.

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Terminal Fluorination Modulates Crystallinity and Aggregation of Fully Non‐Fused Ring Electron Acceptors for High‐Performance and Durable Near‐Infrared Organic Photodetectors

Liu,

Guo,

et al. 2024

Angewandte Chemie

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High dark current density (Jd) severely hinders further advancement of near‐infrared organic photodetectors (NIR OPDs). Herein, we tackle this grand challenge by regulating molecular crystallinity and aggregation of fully non‐fused ring electron acceptors (FNREAs). In contrast to the general trend in terminal halogenation of electron acceptors, TBT‐V‐F, featuring fluorinated terminals, notably demonstrates crystalline intensification and a higher prevalence predominance of J‐aggregate compared to its chlorinated counterpart (TBT‐V‐Cl). The amalgamation of advantages confers TBT‐V‐F‐based OPDs with more organized active layer morphology and denser molecular packing, resulting in improved charge transport, decreased energetic disorder, and reduced trap density. Consequently, the corresponding self‐powered OPDs exhibit a 40‐fold decrease in Jd, a remarkable increase in detectivity (D*sh), faster response time, and superior thermal stability compared to TBT‐V‐Cl‐based OPDs. Further interfacial optimization results in an ultra‐low Jd of 7.30´10‐12 A cm‐2 with D*sh over 1013 Jones in 320‐920 nm wavelength and a climax of 2.2´1014 Jones at 800 nm for the TBT‐V‐F‐based OPDs, representing one of the best results reported to date. This work paves a compelling material‐based strategy to suppress Jd for highly sensitive NIR OPDs, while also illustrates the viability of FNREAs in construction of stable and affordable NIR OPDs for real‐world applications.

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Oxide vacancy passivation through interface engineering of Tetraphenylethylene-Based Small-Molecule with sulfonate functional group for efficient organic photodetector

Cited by 5 publications

References 54 publications

Efficient noise suppression via controlling the optical cavity in near-infrared organic photoplethysmography sensors

Efficient noise suppression via controlling the optical cavity in near-infrared organic photoplethysmography sensors

Enhancing Detection Frequency and Reducing Noise Through Continuous Structures via Release‐Controlled Transfer Toward Light‐Based Wireless Communication

Terminal Fluorination Modulates Crystallinity and Aggregation of Fully Non‐Fused Ring Electron Acceptors for High‐Performance and Durable Near‐Infrared Organic Photodetectors

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