Oxygen-activated growth and bandgap tunability of large single-crystal bilayer graphene

Hao, Yufeng; Wang, Lei; Liu, Yuanyue; Chen, Hua; Wang, Xiaohan; Tan, Cheng; Nie, Shu; Suk, Ji Won; Jiang, Tengfei; Liang, Tengfei; Xiao, Junfeng; Ye, Wenjing; Dean, Cory; Yakobson, Boris I.; McCarty, Kevin F.; Kim, Philip; Hone, James; Colombo, Luigi; Ruoff, Rodney S.

doi:10.1038/nnano.2015.322

Cited by 298 publications

(336 citation statements)

References 31 publications

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“…When rolling or vertically stacking Cu foils via direct physical contact with a gap of about tens of micrometres, the gas flow in the narrow spaces of the stacked Cu foils could be in the molecular flow regime, where the CH 4 would have high colliding frequency and substantially enhance the local concentration of carbon flux, and the hence graphene growth rate is improved 46, 71. Also the special substrate configurations were designed which formed confining spaces to suppress the loss of Cu by evaporation and redeposition and thus led to a smoother surface for fast graphene growth, especially under low pressure 46, 54…”

Section: The Ways Towards Ultrafast Graphene Growthmentioning

confidence: 99%

“…The growth of large‐area high‐quality graphene films is fundamental for the upcoming graphene applications. Chemical vapour deposition (CVD) method offers good prospects to produce large‐size graphene films due to its simplicity, controllability and cost‐efficiency 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66, 67, 68, 69, 70, 71, 72, 73, 74, 75. Many researches have verified that graphene can be catalytically grown on metallic substrates, like ruthenium (Ru),13, 14 iridium (Ir),15, 16 platinum (Pt),17, 18, …”

Section: Introductionmentioning

confidence: 99%

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The Way towards Ultrafast Growth of Single‐Crystal Graphene on Copper

Zhang

Qiu

et al. 2017

Advanced Science

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The exceptional properties of graphene make it a promising candidate in the development of next‐generation electronic, optoelectronic, photonic and photovoltaic devices. A holy grail in graphene research is the synthesis of large‐sized single‐crystal graphene, in which the absence of grain boundaries guarantees its excellent intrinsic properties and high performance in the devices. Nowadays, most attention has been drawn to the suppression of nucleation density by using low feeding gas during the growth process to allow only one nucleus to grow with enough space. However, because the nucleation is a random event and new nuclei are likely to form in the very long growth process, it is difficult to achieve industrial‐level wafer‐scale or beyond (e.g. 30 cm in diameter) single‐crystal graphene. Another possible way to obtain large single‐crystal graphene is to realize ultrafast growth, where once a nucleus forms, it grows up so quickly before new nuclei form. Therefore ultrafast growth provides a new direction for the synthesis of large single‐crystal graphene, and is also of great significance to realize large‐scale production of graphene films (fast growth is more time‐efficient and cost‐effective), which is likely to accelerate various graphene applications in industry.

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Section: The Ways Towards Ultrafast Graphene Growthmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

The Way towards Ultrafast Growth of Single‐Crystal Graphene on Copper

Zhang

Qiu

et al. 2017

Advanced Science

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“…Therefore, when analyzing graphene mobility data it is critically important to know the quality of the dielectric substrate, the crystallinity of the graphene, and the gate dielectric. This was clearly demonstrated by the use of hexagonal boron nitride (h-BN) as a substrate material and gate dielectric [79], which can lead to very high mobilities in both single-crystal and bilayer graphene [80,81]. In cases where the surface of graphene is not exposed to any organic compounds during the transfer process, the mobility is also greatly improved [82] although in this case perhaps the benefit is also associated with low strain in the graphene films transferred using h-BN [83].…”

Section: Global Transport Properties Of Polycrystalline Graphenementioning

confidence: 99%

Scaling properties of polycrystalline graphene: a review

et al. 2016

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We present an overview of the electrical, mechanical, and thermal properties of polycrystalline graphene. Most global properties of this material, such as the charge mobility, thermal conductivity, or Young's modulus, are sensitive to its microstructure, for instance the grain size and the presence of line or point defects. Both the local and global features of polycrystalline graphene have been investigated by a variety of simulations and experimental measurements. In this review, we summarize the properties of polycrystalline graphene, and by establishing a perspective on how the microstructure impacts its large-scale physical properties, we aim to provide guidance for further optimization and improvement of applications based on this material, such as flexible and wearable electronics, and high-frequency or spintronic devices.

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“…For the roles of O 2 and H 2 in the graphene growth kinetics, previous study reported that the O 2 can lower nucleation density141516 and reduce the energy barrier for carbon precursor attachment to the edges of graphene1417, thus the growth rate of single-crystal graphene can be increased18. Besides, the role of H 2 has been reported to act as an etching reagent that tailors the domain structure1920 and terminates the graphene edges to form few layers2122.…”

mentioning

confidence: 99%

Roles of Oxygen and Hydrogen in Crystal Orientation Transition of Copper Foils for High-Quality Graphene Growth

Zhao

Shi

et al. 2017

Sci Rep

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The high-quality graphene film can be grown on single-crystal Cu substrate by seamlessly stitching the aligned graphene domains. The roles of O2 and H2 have been intensively studied in the graphene growth kinetics, including lowering the nucleation sites and tailoring the domain structures. However, how the O2 and H2 influence Cu orientations during recrystallization prior to growing graphene, still remains unclear. Here we report that the oxidation of Cu surface tends to stabilize the Cu(001) orientation while impedes the evolution of Cu(111) single domain during annealing process. The crystal orientation-controlled synthesis of aligned graphene seeds is further realized on the long-range ordered Cu(111) substrate. With decreasing the thickness of oxide layer on Cu surface by introducing H2, the Cu(001) orientation changes into Cu(111) orientation. Meanwhile, the average domain size of Cu foils is increased from 50 μm to larger than 1000 μm. The density functional theory calculations reveal that the oxygen increases the energy barrier for Cu(111) surface and makes O/Cu(001) more stable than O/Cu(111) structure. Our work can be helpful for revealing the roles of O2 and H2 in controlling the formation of Cu single-crystal substrate as well as in growing high-quality graphene films.

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Oxygen-activated growth and bandgap tunability of large single-crystal bilayer graphene

Cited by 298 publications

References 31 publications

The Way towards Ultrafast Growth of Single‐Crystal Graphene on Copper

The Way towards Ultrafast Growth of Single‐Crystal Graphene on Copper

Scaling properties of polycrystalline graphene: a review

Roles of Oxygen and Hydrogen in Crystal Orientation Transition of Copper Foils for High-Quality Graphene Growth

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