Oxygen and Carbon Distribution in 80Kg Multicrystalline Silicon Ingot

Kerkar, F.; Kheloufi, A.; Dokhan, Nahed; Ouadjaout, D.; Belhousse, S.; Medjahed, Sidali; Meribai, Nadjib; Laib, Karim

doi:10.1007/s12633-019-00154-0

Cited by 15 publications

(4 citation statements)

References 13 publications

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“…In this study, 200 µm thickness industrial solar-grade cells with an aluminum back surface field (Al-BSF) based on p-type mono-and multi-crystalline silicon substrates were used [16]. The substrate properties are regrouped in the Table 1.…”

Section: Methodsmentioning

confidence: 99%

Light Induced Degradation Quantification by Monitoring the VOC Output of Silicon Solar Cell Using Low-Cost Real-Time Virtual Instrumentation

Chibane,

Kouhlane,

Bouhafs

et al. 2023

JSMPM

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Silicon-based solar cells suffer from different types of light-induced efficiency losses (can cause up to 10% loss), known as light-induced degradation (LID). Impurities, such as boron, iron, and oxygen, are common at different concentrations in these solar cells. They form active recombination defects in boron-doped mono-crystalline (Cz-Si) and multi-crystalline (mc-Si) solar cells during illumination. For the solar industry, this will lead to serious financial loss, hence the importance of inspecting and controlling the LID level accurately. Seeking to minimize the human factor and the inaccuracy that comes with it, we have proposed in this research a low-cost virtual instrumentation solution to provide a new real-time instrumentation technique for solar cell characteristics such as open circuit voltage (VOC). The virtual data acquisition system (VDAS) design is based on a low-cost Arduino board associated with MATLAB/Simulink software. Moreover, this system can collect in real time the values of solar cell outputs under prolonged illumination and under different temperatures of the LID test. Further, kinetic modeling of the solar cell output VOC variation as a function of light soak duration; shows the predominance of one type metastable defect over the LID test of c-Si solar cells. Additionally, degradation mechanism in mc-Si solar cells involve more than one metastable defect and are more complexes due to the mc-Si substrate elaboration technique compared to c-Si substrate. Furthermore, the temperature dependence of the concentrations (NVoc) and the thermal activation energies of the defects have been extracted from the experimental VOC measurements obtained using the VDAS. Finally, the system minimizes the test period and errors for solar cell characterization compared to traditional approaches.

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Section: Methodsmentioning

confidence: 99%

Light Induced Degradation Quantification by Monitoring the VOC Output of Silicon Solar Cell Using Low-Cost Real-Time Virtual Instrumentation

Chibane,

Kouhlane,

Bouhafs

et al. 2023

JSMPM

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“…Figure 1 shows the schematic diagram of the structures and grids of the G6 and G7 DS furnaces. The main difference between G6 and G7 is that the ingot size was enlarged from 1124 × 1124 × 343 mm 3 to 1320 × 1320 × 385 mm 3 . The upgraded DS system mainly consists of graphite resistance heaters, heat exchange block, quartz crucible, insulations, susceptor, and thermal gate.…”

Section: Geometry and Heat Transfer Modelmentioning

confidence: 98%

“…The directional solidi cation (DS) method is an essential technique for growing crystalline silicon material for photovoltaic (PV) applications due to its convenient operation and low-quality requirement in feedstock [1,2]. However, the oxygen(O) and carbon(C) impurities are the main harmful impurities in the DS process [3]. The O and C impurities signi cantly in uence the electrical properties and mechanical strength of silicon wafers [4][5][6].…”

Section: Introductionmentioning

confidence: 99%

Numerical Analysis of the Influence of Size Upgrading on Oxygen and Carbon Impurities in Casting Silicon

Zhang

et al. 2023

Silicon

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Size upgrading is the main method to increase production capacity and reduce production costs during the directional solidi cation of silicon ingots. The performance of solar cells depends directly on the quality of the wafer and impurities distributions in silicon ingots. The distributions of oxygen and carbon impurities in G6 and G7 directional solidi cation furnaces are studied. The transient global simulation method is used to calculate the coupled thermal and ow elds in the furnaces, considering the convection of gas and melt, chemical reactions, and segregations of the impurities at the crystal-melt interface. The simulation results show that the distributions of oxygen and carbon impurities change signi cantly in the silicon ingot at different growth stages, especially the position of the highest concentration of carbon impurities has shifted. Compared with the G6 furnace, the average concentrations of oxygen and carbon in silicon crystal in the G7 furnace are reduced by 6.7%, and 7.3% respectively. With the growth of silicon crystal, the average concentration of oxygen gradually decreases, while the average concentration of carbon gradually increases.

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“…This not only leads to degradation of the solar cells but also increases the number of wire saw defects on the wafers. 11 For these reasons, controlling the concentration of carbon and oxygen in polysilicon is the key to improving the quality of polysilicon.…”

Section: Introductionmentioning

confidence: 99%

Catalytic conversion of carbon-containing impurity methyldichlorosilane to purify raw material trichlorosilane of polysilicon production

Geng

Huang

2022

React. Chem. Eng.

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Oxygen and Carbon Distribution in 80Kg Multicrystalline Silicon Ingot

Cited by 15 publications

References 13 publications

Light Induced Degradation Quantification by Monitoring the VOC Output of Silicon Solar Cell Using Low-Cost Real-Time Virtual Instrumentation

Light Induced Degradation Quantification by Monitoring the VOC Output of Silicon Solar Cell Using Low-Cost Real-Time Virtual Instrumentation

Numerical Analysis of the Influence of Size Upgrading on Oxygen and Carbon Impurities in Casting Silicon

Catalytic conversion of carbon-containing impurity methyldichlorosilane to purify raw material trichlorosilane of polysilicon production

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