2009
DOI: 10.1063/1.3104781
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Oxygen and nitrogen impurities in microcrystalline silicon deposited under optimized conditions: Influence on material properties and solar cell performance

Abstract: The influence of oxygen and nitrogen impurities on the performance of thin-film solar cells based on microcrystalline silicon (mu c-Si:H) has been systematically investigated. Single mu c-Si:H layers and complete mu c-Si:H solar cells have been prepared with intentional contamination by admitting oxygen and/or nitrogen during the deposition process. The conversion efficiency of similar to 1.2 mu m thick mu c-Si: H solar cells is deteriorated if the oxygen content in absorber layers exceeds the range from 1.2 x… Show more

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Cited by 51 publications
(34 citation statements)
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“…and thus, these values are now below the corresponding critical thresholds of deterioration of cell performance of 1.2 to 2 × 10 19 cm −3 and 6 to 8 × 10 18 cm −3 respectively reported in [9]. Additionally, C C = 1.4 × 10 19 cm −3 , and C F = 4.2 × 10 17 cm −3 , which is probably still too high for carbon but this cannot explain the very limited efficiencies of the cells.…”
Section: Oxygen Contamination Reductionmentioning
confidence: 82%
“…and thus, these values are now below the corresponding critical thresholds of deterioration of cell performance of 1.2 to 2 × 10 19 cm −3 and 6 to 8 × 10 18 cm −3 respectively reported in [9]. Additionally, C C = 1.4 × 10 19 cm −3 , and C F = 4.2 × 10 17 cm −3 , which is probably still too high for carbon but this cannot explain the very limited efficiencies of the cells.…”
Section: Oxygen Contamination Reductionmentioning
confidence: 82%
“…In the figure we can observe two bands at 647 cm ) modes. At 1050 cm −1 it is expected the Si-O related band [19], but for these samples it is almost negligible. The behavior of all these bands is in full agreement with the results of the composition and OES measurements.…”
Section: Resultsmentioning
confidence: 99%
“…Our best p-type BG TFTs exhibit a field effect mobility of ~ 1. channel by nitrogen, which can lead to an unintentional ntype doping the following layers (intrinsic and p-doped µc-Si) were deposited in a different reactor [10]. Moreover, as p-type channels TFTs are very sensitive to any residual gases, special attention was paid to outgas the reactor before µc-Si deposition.…”
Section: Methodsmentioning
confidence: 99%