Oxygen concentration dependence of as-grown defect formation in nitrogen-doped Czochralski silicon single crystals

Kajiwara, Kaoru; Torigoe, Kazuhisa; Harada, Katsumi; Hourai, Masataka; Nishizawa, Satoshi

doi:10.1016/j.jcrysgro.2021.126236

Cited by 9 publications

(7 citation statements)

References 16 publications

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“…In particular, the agreement of experimental and PDSim results with low oxygen concentrations can have a significant impact on grown-in defect control for Si power devices. 29,30) 3.2.1.2. Application in other experimental results.…”

Section: Determination Of a And C Vmentioning

confidence: 99%

Numerical and experimental investigation of effect of oxygen concentration on grown-in defects in a Czochralski silicon single crystal

Suewaka

Saishoji

Nishizawa

2023

Jpn. J. Appl. Phys.

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Grown-in defect-free wafers are required in silicon semiconductor devices. A point defect concentration simulation was performed along with an experimental investigation, demonstrating a wide range of oxygen concentrations from 1.6 × 1017 to 9.1 × 1017 cm−3 in crystals. Thus, the effect of oxygen atoms in a Czochralski silicon single crystal with grown-in defect behavior was revealed. Consequently, the increasing vacancy concentration trapped by the oxygen atom (oxygen coefficient) was estimated as 4.61 × 10−5 per oxygen atom. Previously, for obtaining the oxygen coefficient, a regression equation assuming thermal equilibrium concentrations of vacancy (V) and interstitial Si (I) was applied to the experimental results. However, the interface shape, thermal stress, and hot-zone structure of the experimental level needed to be arranged; this affected the grown-in defect behavior. In this study, the oxygen coefficient and thermal equilibrium concentration of V and I were determined uniquely without arranging the situations experimental level.

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Section: Determination Of a And C Vmentioning

confidence: 99%

Numerical and experimental investigation of effect of oxygen concentration on grown-in defects in a Czochralski silicon single crystal

Suewaka

Saishoji

Nishizawa

2023

Jpn. J. Appl. Phys.

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“…The reduction and control of grown-in defects in crystals are needed to meet demands related to the trend of higher integration and decreasing scale for silicon semiconductor devices and high-performance power devices. 1,2) Grown-in defects are controlled by the ratio of the crystal growth rate v to the temperature gradient G in the growth direction near the solid-liquid interface, i.e. v/G.…”

Section: Introductionmentioning

confidence: 99%

Numerical and experimental investigation of the effect of the solid–liquid interface shape on grown-in defects in a silicon single crystal

Suewaka,

Saishoji,

Nishizawa

2024

Jpn. J. Appl. Phys.

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The demand for grown-in defect-free wafers for high-performance silicon semiconductor devices is significantly increasing. To obtain defect-free crystals, the ratio v/G of the growth rate v to the temperature gradient G in the growth direction near the solid–liquid interface during crystal growth must be kept at a critical value ξcri. Furthermore, ξcri depends on the interface shape, which is interpreted as the change in the diffusion direction of point defects due to the change in the interface shape. In this study, we present a new interpretation based on simulations and experiments, in which ξcri changes due to the effect of the diffusion direction of point defects when the solid–liquid interface shape is convex, as in the conventional interpretation, as well as the effect of thermal stress when it is concave.

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“…Generally, diffusion and/or the aggregation process of Si self-interstitials and vacancies are affected by N incorporation [22]. The N-suppression effect on the as-grown defects in Si is very suitable for the fabrication of insulated gate bipolar transistors (IGBTs) which have attracted considerable attention for their potential use in the electric vehicle industry [23]. There is experimental evidence that N implantation in Si induces transient enhanced diffusion of dopants [24].…”

Section: Introductionmentioning

confidence: 99%

Nitrogen-Related Defects in Crystalline Silicon

Sgourou,

Sarlis,

Chroneos

et al. 2024

Applied Sciences

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Defects and impurities play a fundamental role in semiconductors affecting their mechanical, optical, and electronic properties. Nitrogen (N) impurities are almost always present in a silicon (Si) lattice, either unintentionally, due to the growth and processing procedures, or intentionally, as a result of implantation. Nitrogen forms complexes with intrinsic defects (i.e., vacancies and self-interstitials) as well as with other impurities present in the Si lattice such as oxygen and carbon. It is, therefore, necessary to investigate and understand nitrogen-related defects, especially their structures, their energies, and their interaction with intrinsic point defects and impurities. The present review is focused on nitrogen-related defects (for example Ni, Ns, NiNi, NiNs, NsNs); nitrogen–self-interstitial and nitrogen-vacancy-related complexes (for example NsV, (NiNi)Sii, (NsNs)V); nitrogen–oxygen defects (for example NO, NO2, N2O, N2O2); more extended clusters such as VmN2On (m, n = 1, 2); and nitrogen–carbon defects (for example CiN and CiNO). Both experimental and theoretical investigations are considered as they provide complementary information.

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Oxygen concentration dependence of as-grown defect formation in nitrogen-doped Czochralski silicon single crystals

Cited by 9 publications

References 16 publications

Numerical and experimental investigation of effect of oxygen concentration on grown-in defects in a Czochralski silicon single crystal

Numerical and experimental investigation of effect of oxygen concentration on grown-in defects in a Czochralski silicon single crystal

Numerical and experimental investigation of the effect of the solid–liquid interface shape on grown-in defects in a silicon single crystal

Nitrogen-Related Defects in Crystalline Silicon

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