Oxygen-Deficient Oxide Growth by Subliming the Oxide Source Material: The Cause of Silicide Formation in Rare Earth Oxides on Silicon

Bierwagen, Oliver; Proessdorf, André; Niehle, Michael; Grosse, Frank; Trampert, A.; Klingsporn, Max

doi:10.1021/cg400652b

Cited by 13 publications

(8 citation statements)

References 23 publications

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“…There are only a few studies in the oxide MBE literature using evaporation of the metal oxide from an effusion cell. [19][20][21][22][23] Vapor pressure data indicate that SnO 2 sublimes in the form of suboxides (SnO x ) with vapor pressures sufficient for reasonable flux rates at practically feasible effusion cell temperatures, i.e., ∼10 −5 Torr at 1300 • C. 24 Figure 1(b) shows RHEED during BaSnO 3 growth on (001)SrTiO 3 at a substrate temperature of 800 • C, using the SnO 2 source. The RHEED pattern is streaky from the start of the growth and remains so throughout, without any significant decrease in the intensity.…”

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confidence: 99%

High-mobility BaSnO3 grown by oxide molecular beam epitaxy

et al. 2016

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High-mobility perovskite BaSnO3 films are of significant interest as new wide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO3 films have been challenging to grow. Here, we demonstrate a modified oxide molecular beam epitaxy (MBE) approach, which supplies pre-oxidized SnOx. This technique addresses issues in the MBE of ternary stannates related to volatile SnO formation and enables growth of epitaxial, stoichiometric BaSnO3. We demonstrate room temperature electron mobilities of 150 cm2 V−1 s−1 in films grown on PrScO3. The results open up a wide range of opportunities for future electronic devices.

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confidence: 99%

High-mobility BaSnO3 grown by oxide molecular beam epitaxy

et al. 2016

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“…Early thermochemical experiments showed that in thermodynamic equilibrium, the heating of a mixture of Ga 2 O 3 , In 2 O 3 , and SnO 2 with their respective metals produces the sub-oxides Ga 2 O, 13 In 2 O, 14 and (SnO) n (n ¼ 1, 2, 3, and 4), 15 respectively. Volatile sub-oxides with different stoichiometries are also known to form during the thermal decomposition or sublimation of metal oxides 16 rare-earth oxides, 17,18 or during pulsed laser ablation of oxides (e.g., SnO 2 (Ref. 19…”

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confidence: 99%

The competing oxide and sub-oxide formation in metal-oxide molecular beam epitaxy

Vogt

Bierwagen

2015

Applied Physics Letters

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The hetero-epitaxial growth of the n-type semiconducting oxides β-Ga2O3, In2O3, and SnO2 on c- and r-plane sapphire was performed by plasma-assisted molecular beam epitaxy. The growth-rate and desorbing flux from the substrate were measured in-situ under various oxygen to metal ratios by laser reflectometry and quadrupole mass spectrometry, respectively. These measurements clarified the role of volatile sub-oxide formation (Ga2O, In2O, and SnO) during growth, the sub-oxide stoichiometry, and the efficiency of oxide formation for the three oxides. As a result, the formation of the sub-oxides decreased the growth-rate under metal-rich growth conditions and resulted in etching of the oxide film by supplying only metal flux. The flux ratio for the exclusive formation of the sub-oxide (e.g., the p-type semiconductor SnO) was determined, and the efficiency of oxide formation was found to be the highest for SnO2, somewhat lower for In2O3, and the lowest for Ga2O3. Our findings can be generalized to further oxides that possess related sub-oxides.

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“…Furthermore, additional oxygen (6N purity) was introduced in the growth chamber using a piezo leakage valve to stabilize the oxygen partial pressure during growth. The additional oxygen is used to prevent silicide formation due to the oxygen depletion of the Gd 2 O 3 source material to realize epitaxial growth of stoichiometric Gd 2 O 3 (Bierwagen et al, 2013). The oxygen supply was started shortly after the beginning of the Gd 2 O 3 growth, so that silicon surface passivation by SiO 2 formation is prevented.…”

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Influence of nanostructure formation on the crystal structure and morphology of epitaxially grown Gd₂O₃ on Si(001)

Gribisch

Schmidt

Osten

et al. 2019

Acta Crystallogr Sect B

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The influence of growth conditions on the layer orientation, domain structure and crystal structure of gadolinium oxide (Gd2O3) on silicon (001) has been investigated. Gd2O3 was grown at low (250°C) and high (850°C) temperatures with different oxygen partial pressure as well as a temperature ramp up during growth. At low temperature, the cubic bixbyite type of crystal structure with space group was grown at low oxygen partial pressure. The layers consist of two domains oriented orthogonal to each other. The epitaxial relationships for the two domains were found to be Gd2O3(110)[]||Si(001)[110] and Gd2O3(110)[001]||Si(001)[], respectively. Applying additional oxygen during growth results in a change in crystal and domain structures of the grown layer into the monoclinic Sm2O3‐type of structure with space group C2/m with () orientation and mainly two orthogonal domains with the epitaxial relationship Gd2O3()[010]||Si(100)⟨110⟩ and a smooth surface morphology. Some smaller areas have two intermediate azimuthal orientations between these variants, which results in a six‐domain structure. The change in crystal structure can be understood based on the Gibbs–Thomson effect caused by the initial nucleation of nanometre‐sized islands and its variation in diameter with a change in growth conditions. The crystal structure remains stable even against a temperature ramp up during growth. The layers grown at high temperature exhibit a nanowire‐like surface morphology, where the nanowires have a cubic crystal structure and are aligned orthogonal to each other along the ⟨110⟩ in‐plane directions. An increase in oxygen supply results in a reduced length and increased number of nanowires due to lower adatom mobility. The results clearly indicate that both kinetic and thermodynamic factors have a strong impact on the crystal structure, epitaxial relationship and morphology of the grown layers.

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Oxygen-Deficient Oxide Growth by Subliming the Oxide Source Material: The Cause of Silicide Formation in Rare Earth Oxides on Silicon

Cited by 13 publications

References 23 publications

High-mobility BaSnO3 grown by oxide molecular beam epitaxy

High-mobility BaSnO3 grown by oxide molecular beam epitaxy

The competing oxide and sub-oxide formation in metal-oxide molecular beam epitaxy

Influence of nanostructure formation on the crystal structure and morphology of epitaxially grown Gd₂O₃ on Si(001)

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Oxygen-Deficient Oxide Growth by Subliming the Oxide Source Material: The Cause of Silicide Formation in Rare Earth Oxides on Silicon

Cited by 13 publications

References 23 publications

High-mobility BaSnO3 grown by oxide molecular beam epitaxy

High-mobility BaSnO3 grown by oxide molecular beam epitaxy

The competing oxide and sub-oxide formation in metal-oxide molecular beam epitaxy

Influence of nanostructure formation on the crystal structure and morphology of epitaxially grown Gd2O3 on Si(001)

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Influence of nanostructure formation on the crystal structure and morphology of epitaxially grown Gd₂O₃ on Si(001)