Oxygen diffusion in La_2/3Ga_1/3MnO₃ and Sr₂FeMoO₆ thin films

Effect of Vacuum and O2 Annealing Treatments on Structural and Magnetic Properties of La0.5Ca0.5MnO3 Thin Films

“…It should be noted here that O 2 annealing at 773 K for one hour is not sufficient to recover the magnetic moment and, also, to shift the 040 reflection of LCMO peak back to its original position. This result can be explained by the slower kinetics of O-inward diffusion to the LCMO lattice than the outward diffusion from the film, in line with the data reported in [12]. A remarkable decrease in the amount of Mn 4+ ions compared to the amount of Mn 3+ ions may increase the Jahn-Teller distortion and, in addition, weaken the double-exchange interaction, leading to reduced magnetic moment and conductivity [13][14][15].…”

“…Oxygen stoichiometry, which can be varied by heat treatments in vacuum and O 2 environments, has been shown to have a crucial role in determining the structural and electronic states of several oxide thin films [10][11][12]. The response of the oxide to the heat treatments mentioned above can be considerably different.…”

“…For instance, the resistance of Sr 2 FeMoO 6 films deposited on (100) SrTiO 3 (STO) substrate increases during O 2 annealing, explained by the formation of high resistance regions in grain boundaries, whereas La 0.67 Ca 0.33 MnO 3 , in the ferromagnetic (FM) phase, deposited on (100) NdGaO 3 (NGO), becomes more metallic, conceivable recognizing the inverse relation between the hole concentration and the O vacancies [12]. It should be noted here that a great majority of the data reported for La (1−x) Ca x MnO 3 system are for the composition around x = 0.3 [10][11][12]. Consequently, the response of different compositions of this family to heat treatments in both vacuum and O 2 atmosphere is of particular interest to understand whether some additional mechanisms are at work for the compositions having other electronic phases (e.g.…”

High On/Off Ratio Memristive Switching of Manganite/Cuprate Bilayer by Interfacial Magnetoelectricity

“…First, we observe memristive hysteresis when the temperature is far below room temperature, meaning there may not be sufficient thermal energy to enable the vacancy motion despite the barrier being lowered by the external electric field . More specifically, the diffusion barrier for oxygen‐vacancy migration in LCMO is 1.3 eV and the estimated maximum electric field during the experiment is 0.04 V Å −1 for a 1 V bias. For a hopping distance of 2 Å, the barrier lowering effect due to the electric field is 0.04 eV.…”

Electrical properties of nonstoichiometric In2O3-xthin films

“…A method based on a gradual temperature change of the samples with time at a fixed oxygen pressure and in situ film resistance measurements have been applied in this work [4]. Modelling of oxygen diffusion processes in the films has been employed to explain the observed resistance kinetics and to evaluate oxygen diffusion parameters from the measured resistance kinetics.…”