Oxygen-doped Sb4Te phase change films for high-temperature data retention and low-power application

Hu, Yifeng; Sun, Mingcheng; Song, Sannian; Song, Zhitang; Zhai, Jiwei

doi:10.1016/j.jallcom.2012.11.032

Cited by 41 publications

(17 citation statements)

References 21 publications

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“…The curves of resistance versus 5 thin films were also measured (not shown here). The crystallization activation energy E a can be calculated from a Kissinger's equation [13]:…”

Section: Resultsmentioning

confidence: 99%

“…The crystallization temperature T c of SbSe(100 nm), [Ge(4 nm)/ SbSe(5 nm)] 11 , [Ge(8 nm)/SbSe(5 nm)] 8 , [Ge(12 nm)/ SbSe(5 nm)] 6 , [Ge(16 nm)/SbSe(5 nm)] 5 thin films were about 200, 207, 210, 213 and 215°C, which proved that T c of the SLL Ge/SbSe thin films increase with the increase in thickness ratio of Ge to SbSe within the materials. The crystallization temperature T c of phase change material is connected to the thermal stability of the metastable amorphous phase, the higher T c , the better thermal stability of the SLL thin films [13]. From this respect, it can be seen that the SLL Ge/SbSe thin films with higher thickness ratio of Ge to SbSe will have a better long-term thermal stability of the metastable amorphous phase.…”

Section: Introductionmentioning

confidence: 99%

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High speed and low power consumption of superlattice-like Ge/Sb70Se30 thin films for phase change memory application

Zhu

et al. 2015

J Mater Sci: Mater Electron

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In comparison to Ge 2 Sb 2 Te 5 (GST) and pure Sb 70 Se 30 (SbSe) thin films, superlattice-like (SLL) Ge/Sb 70 Se 30 (Ge/SbSe) has a higher crystallization temperature, larger crystallization activation energy, better data retention and lower power consumption. SLL Ge/SbSe thin films with different thickness of Ge and SbSe layers were prepared by magnetron sputtering system. The amorphous-to-crystalline transitions of SLL Ge/SbSe thin films were investigated through in situ film resistance measurement. The crystallization activation energy of SLL Ge/SbSe thin films was calculated from a Kissinger plot. The data retention time was estimated through isothermal timedependent resistance measurement by Arrhenius equation. The phase structure of the thin films annealed at different temperatures was investigated by using X-ray diffraction. Phase change memory cells based on the SLL [Ge(8 nm)/ SbSe(5 nm)] 4 thin films were fabricated to test and evaluate the switching speed and operation consumption.

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“…The curves of resistance versus 5 thin films were also measured (not shown here). The crystallization activation energy E a can be calculated from a Kissinger's equation [13]:…”

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

High speed and low power consumption of superlattice-like Ge/Sb70Se30 thin films for phase change memory application

Zhu

et al. 2015

J Mater Sci: Mater Electron

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“…The light source used for irradiating the samples was a frequency-doubled modellocked neodymium yttrium aluminum garnet laser operating at 532-nm wavelength with a pulse duration of 30 ps. of all thin films increases slowly with the increase in temperature due to a thermally assisted trap-limited conduction [15]. The carrier concentration subsequently rises abruptly as the heating temperature approached the crystallization temperature T c .…”

Section: Methodsmentioning

confidence: 99%

Superlattice-like SnSb4/Ga3Sb7 thin films for ultrafast switching phase-change memory application

Zhai

et al. 2015

Appl. Phys. A

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The carrier concentration of Sb-rich phase SnSb 4 , Ga 3 Sb 7 and superlattice-like [SnSb 4 (3.5 nm)/Ga 3-Sb 7 (4 nm)] 7 (SLL-7) thin films as a function of annealing temperature was investigated to explain the reason of resistance change. The activation energy for crystallization was calculated with a Kissinger equation to estimate the thermal stability. In order to illuminate the transition mechanisms, the crystallization kinetics of SLL-7 were explored by using Johnson-Mehl-Avrami theory. The obtained values of Avrami indexes indicate that a onedimensional growth-dominated mechanism is responsible for the set transition of SLL-7 thin film. X-ray diffractometer and Raman scattering spectra were recorded to investigate the change of crystalline structure. The measurement of atomic force microscopy indicated that SLL-7 thin film has a good smooth surface. A picosecond laser pump-probe system was used to test and verify phasechange speed of the SLL-7 thin film.

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“…What is more, there are also other issues such as the high reset current and slow speed of amorphous-to-crystalline phase transition that need to be addressed [10][11][12]. Thermal stability and transformation speed are two main features that can be further improved for practical applications of PCM [13][14][15]. Therefore, exploring new phase change materials with better data retention at high temperature as well as fast switching speed is an important way to push the progress of PCM technology [16].…”

Section: Introductionmentioning

confidence: 99%

Sb52Se36Te12 material with high-temperature data retention coupled with rapid crystallization speed for phase change application

Chen

Song

Zhang

et al. 2015

Applied Surface Science

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Oxygen-doped Sb4Te phase change films for high-temperature data retention and low-power application

Cited by 41 publications

References 21 publications

High speed and low power consumption of superlattice-like Ge/Sb70Se30 thin films for phase change memory application

High speed and low power consumption of superlattice-like Ge/Sb70Se30 thin films for phase change memory application

Superlattice-like SnSb4/Ga3Sb7 thin films for ultrafast switching phase-change memory application

Sb52Se36Te12 material with high-temperature data retention coupled with rapid crystallization speed for phase change application

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