Oxygen implant isolation of <i>n</i>-GaN field-effect transistor structures

Dang, G.; Cao, X. A.; Ren, F.; Pearton, S. J.; Han, Jung; Baca, Albert G.; Shul, R. J.

doi:10.1116/1.590864

Cited by 14 publications

(9 citation statements)

References 14 publications

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“…1 The high-density plasma using the fluorine-containing gas mixtures was recently studied to improve problems of the conventional RIE technique, such as the micromasking surface residue formation and the low etch rate. Reactive ion etching (RIE) techniques have been studied to provide a reliable patterning method for the SiC devices, as the simple wet etch techniques are not yet available due to the chemical stability of this material.…”

Section: Introductionmentioning

confidence: 99%

Reactive ion etching of SiC using C2F6/O2 inductively coupled plasma

Kong

Choi

Lee

et al. 2002

J. Electron. Mater.

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The inductively coupled plasma-reactive ion etching (ICP-RIE) of SiC single crystals using the C 2 F 6 /O 2 gas mixture was investigated. It was observed that the etch rate increased as the ICP power and bias power increased. With increasing sample-coil distance, O 2 concentration, and chamber pressure, the etch rate initially increased, reached a maximum, and then decreased. Mesas with smooth surfaces (roughness Յ 1 nm) and vertical sidewalls (ϳ85°) were obtained at low bias conditions with a reasonable etch rate of about 100 nm/min. A maximum etch rate of 300 nm/min could be obtained by etching at high bias conditions (Ն300 V), in which case rough surfaces and the trenched sidewall base were observed. The trenching effect could be suppressed by etching the samples on anodized Al plates, although mesas with sloped (60-70°) sidewalls were obtained. Results of various surface characterization indicated little contamination and damage on the etched SiC surfaces. 210Kong, Choi, Lee, Han, and Lee Fig. 1. Etch characteristics of 6H-SiC and 4H-SiC as a function of (a) ICP source power, (b) bias power, (c) pressure, (d) O 2 percentage in C 2 F 6 /O 2 , and (e) the distance between the substrate holder and the source coil.

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Section: Introductionmentioning

confidence: 99%

Reactive ion etching of SiC using C2F6/O2 inductively coupled plasma

Kong

Choi

Lee

et al. 2002

J. Electron. Mater.

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“…The O + ion implant isolation was also investigated on AlGaAs [9], InAlN [10], and GaN (n-type doping)/GaN materials [11] to study the isolation quality, and P/He, Ar + , and N + ions have been employed in AlGaN/GaN HEMTs [12]- [14].…”

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confidence: 99%

Oxygen Ion Implantation Isolation Planar Process for AlGaN/GaN HEMTs

Shiu

Huang

Desmaris

et al. 2007

IEEE Electron Device Lett.

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Abstract-A multienergy oxygen ion implantation process was demonstrated to be compatible with the processing of highpower microwave AlGaN/GaN high electron mobility transistors (HEMTs). HEMTs that are isolated by this process exhibited gate-lag-and drain-lag-free operation. A maximum output power density of 5.3 W/mm at V gs = −4 V and V ds = 50 V and a maximum power added efficiency of 51.5% at V gs = −4 V and V ds = 30 V at 3 GHz were demonstrated on HEMTs without field plates on sapphire substrate. This isolation process results in planar HEMTs, circumventing potential problems with enhanced gate leakage due to the gate contacting the 2-D electron gas at the mesa sidewall.Index Terms-GaN, high electron mobility transistors (HEMTs), implantation, power density, pulsed I-V , transient.

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“…The tensile strain is caused by the incorporation of dopant into interstitial sites or by the occupation of the gallium or nitrogen vacancies by larger substitutional species. The implantation induced damages in the GaN lattice have also been reported [5,6]. The annealing at 800C eases out the strain as can be seen from the (002) and (101) plane reflection.…”

Section: Resultsmentioning

confidence: 84%

“…To make high quality devices, the GaN samples should have high resistivity and low dislocation density to avoid parallel conduction. Dong et al in 1999 used Oxygen implantation in device isolation for GaN based Field Effect Transistor [FET], they had taken implantation energy from 30 KeV to high energy upto 325 KeV [6]. In this paper, we present the results of oxygen implantation on GaN with different energies starting from 30 KeV to 100 KeV and doses to make flat ion implantation profile.…”

Section: Introductionmentioning

confidence: 95%