Oxygen Incorporation in ZnTeO Alloys via Molecular Beam Epitaxy

Zhou, Li; Chen, Chihyu; Jia, Hongfei; Chen, Ling; Banerjee, Debasish; Phillips, Jamie; Wang, Yongqiang

doi:10.1007/s11664-013-2960-x

Cited by 7 publications

(2 citation statements)

References 22 publications

(47 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Hence, even if a few top layers of the surface is contaminated with oxygen and other elements they will show strong XPS peaks. Indeed in our data we see strong oxygen peaks indicating surface contamination which is probably limited to a few top layers [31]. In Table 1, we show the results of elemental concentration (at.%) analyses obtained from XPS spectra of several samples.…”

Section: Resultsmentioning

confidence: 61%

See 1 more Smart Citation

Epitaxial characteristics of MBE-grown ZnTe thin films on GaAs (211)B substrates

Ozceri

Tarhan

2019

Appl. Phys. A

View full text Add to dashboard Cite

Highly crystalline ZnTe thin films were grown on GaAs (211)B substrates by molecular beam epitaxy (MBE) for potential applications such as MCT detectors and optoelectronic devices. We investigated the effects of Te to Zn (VI/II) flux ratio on the quality of ZnTe films in terms of crystal orientation, elemental composition, surface roughness, and dislocation density. Atomic concentrations of Zn, Te, and oxygen complexes due to oxygen contamination on the film surfaces were analyzed by X-ray photoelectron spectroscopy. X-ray double crystal rocking curve full width half maximum (FWHM) of ZnTe (422) peak was observed as 233 arcseconds for a 1.66 μm thick film, which indicates high crystallinity. Wet chemical etching was applied to the films to quantify the crystal quality by calculating etch pit densities (EPD) from scanning electron microscope images. A very low EPD value of 1.7 × 10 7 cm −2 was measured. Additionally, the root mean square roughness values, obtained from atomic force microscopy topography images were in the range of 10-25 nm. These values were supported by FWHM values of red green blue color intensity histograms obtained from Nomarski Microscope images. The results of our analyses indicate that the VI/II flux ratios of 4 and 4.5 produce the best quality ZnTe films on GaAs (211)B substrates.

show abstract

Section: Resultsmentioning

confidence: 61%

“…1c. The peaks at 575.5 eV and 586 eV are related to TeO 2 complexes formed on the surfaces of ZnTe films [33]; [31] due to oxygen contamination from air. The strong TeO 2 peak intensities compared to those of Zn-O peaks indicate that the surface was terminated with Te atoms rather than Zn atoms.…”

Section: Resultsmentioning

confidence: 99%