High-quality, smooth, optimally doped, c-axis thin films of
YBa2Cu3O7-δ were grown on (001) MgO substrates by pulsed laser
deposition and subsequent oxygen annealing. They were characterized
structurally by θ-2θ and four-axis x-ray diffraction and,
electrically, by a self-inductance measurement. Through subsequent annealing
in reduced pressure oxygen environments, underdoped films were produced and
again characterized using the same techniques. The doping is reversible and
reproducible. A monotonic decrease of Tc and an increase of the c-axis
length were found with a decrease of the oxygen partial pressure during the
annealing. From these data corresponding values of δ were determined.
The width of the rocking curve of the (005) peak was found to be substantially
unchanged, at 0.28-0.29°, between the optimally doped and the
underdoped films. The relative peak intensities showed a systematic variation
with δ in agreement with model calculations by Ye and Nakamura. The
grain alignment is exclusively along the MgO high symmetry axes throughout the
film. Resistance-temperature characteristics allowed the pseudogap onset
temperature, T*, to be determined as a function of doping.