Epitaxial c-axis oriented La 2 NiO 4+␦ films were deposited onto SrTiO 3 and NdGaO 3 substrates by the pulsed injection metal organic chemical vapor deposition technique. Experimental conditions were optimized in order to accurately control the composition, thickness, and texture of the layers. X-ray diffraction was used to confirm the high crystalline quality of the obtained material. Electrical characterizations were performed on thin ͑50 nm͒ and thick ͑335 nm͒ layers. The total specific conductivity, which is predominantly electronic, was found to be larger for the thinner films measured ͑50 nm͒, probably due to the effect of the strain present in the layers. Those thin films ͑50 nm͒ showed values even larger than those observed for single crystals and, to our knowledge, are the largest conductivity values reported to date for the La 2 NiO 4+␦ material. The oxygen exchange kinetics was studied by the electrical conductivity relaxation technique, from which the surface exchange coefficient was determined.