Oxygen out-diffusion and compositional changes in zinc oxide during ytterbium ions bombardment

Abstract

Oxygen release and out-diffusion in zinc oxide crystals during heavy ions bombardment has been suggested by many experimental techniques. In this work we have employed secondary ion mass spectrometry to study ZnO implanted with ytterbium ions. Our measurements confirm formation of an oxygen-depleted layer and oxygen out-diffusion and agglomeration at the surface. Moreover, an average compositional change in a heavily damaged near-surface region can also be monitored. This reproducible measurement procedure with subnanometer depth resolution allows to localize precisely these altered layers at the depth of 14-28 nm (oxygen-depleted layer) and 9 nm (maximum of the amorphized region). Such precise measurements may prove to be valuable for further characterization of ion beam induced defects in wide bandgap compound semiconductors and optimization of optoelectronic devices based on these materials.

Dominating migration barrier for intrinsic defects in gallium oxide: Dose-rate effect measurements

“…4(b). Notably, compressive strain buildup was previously observed in ZnO implanted with Yb + ions and authors suggested that this effect is attributed to the lattice parameter decrease due to ion-induced oxygen loss from the implanted layer [33]. This mechanism cannot be excluded despite that the oxygen loss should be more pronounced for higher irradiation temperature potentially leading to the higher strain, which is not the case in Fig.…”

Defect annealing kinetics in ZnO implanted with Zn substituting elements: Zn interstitials and Li redistribution

“…The formation of an O deficient region between the sample surface and R p implanted ions was also recently reported for Yb implanted ZnO single crystals by high resolution SIMS measurements. 42 One of the possible reasons for the formation of open volume defects can be related to local stoichiometric disturbances in the collision cascades. 43 Therefore, an enhanced concentration of O vacancies is expected in the near surface region and this process can affect both Li and dopant redistribution after annealing, as demonstrated recently in Ref.…”