Oxygen partial pressure ratio modulated electrical performance of amorphous InGaZnO thin film transistor and inverter

Zhang, Y.C.; He, Gang; Zhang, C.; Zhu, Li; Yang, Bing; Lin, Qigen; Jiang, Xishun

doi:10.1016/j.jallcom.2018.06.294

Cited by 21 publications

(19 citation statements)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Amorphous Indium-Gallium-Zinc Oxide (a-IGZO) thin-film transistors (TFTs) have recently been considered as the most promising candidate for the new display backplane due to their high mobility, good uniformity, low off current, and good process compatibility with conventional a-Si TFTs [ 1 , 2 , 3 ]. It is well recognized that the performance of a-IGZO TFTs is governed by film qualities, which are sensitive to their process conditions [ 4 , 5 , 6 , 7 ]. In particular, the film density is a good indicator of the film quality [ 8 , 9 ] because a sparse film structure provides spaces where impurity species are incorporated, such as weakly bonded, interstitial, excess oxygen.…”

Section: Introductionmentioning

confidence: 99%

Study of the Correlation between the Amorphous Indium-Gallium-Zinc Oxide Film Quality and the Thin-Film Transistor Performance

Ning

et al. 2021

Nanomaterials

View full text Add to dashboard Cite

In this work, we performed a systematic study of the physical properties of amorphous Indium–Gallium–Zinc Oxide (a-IGZO) films prepared under various deposition pressures, O2/(Ar+O2) flow ratios, and annealing temperatures. X-ray reflectivity (XRR) and microwave photoconductivity decay (μ-PCD) measurements were conducted to evaluate the quality of a-IGZO films. The results showed that the process conditions have a substantial impact on the film densities and defect states, which in turn affect the performance of the final thin-film transistors (TFT) device. By optimizing the IGZO film deposition conditions, high-performance TFT was able to be demonstrated, with a saturation mobility of 8.4 cm2/Vs, a threshold voltage of 0.9 V, and a subthreshold swing of 0.16 V/dec.

show abstract

Section: Introductionmentioning

confidence: 99%

Study of the Correlation between the Amorphous Indium-Gallium-Zinc Oxide Film Quality and the Thin-Film Transistor Performance

Ning

et al. 2021

Nanomaterials

View full text Add to dashboard Cite

show abstract

“…In the case of crystalline oxide semiconductors, As increase O p the crystallinity improved but the energy bandgap decreases 20 . but in the case of TAOS, the energy bandgap increases according to O p 18 . Therefore, it is very important to analyze the correlation between O p and energy bandgap.…”

Section: Introductionmentioning

confidence: 97%

“…However, it is very important to optimize oxygen vacancies because they can also act as traps. For a simple solution process, such as a sol-gel, oxygen vacancies should be controlled according to the composition ratio; however, in a vacuum process, such as a magnetron sputtering process, oxygen vacancies can be controlled by applying oxygen as the active gas 17,18 . Research on various deposition condition is being carried out, and the changes in electrical properties as well as energy bandgap have been analyzed in detail 19 .…”

Section: Introductionmentioning

confidence: 99%

Investigation on energy bandgap states of amorphous SiZnSnO thin films

Lee

Cho

Lee

et al. 2019

Sci Rep

View full text Add to dashboard Cite

The variation in energy bandgaps of amorphous oxide semiconducting SiZnSnO (a-SZTO) has been investigated by controlling the oxygen partial pressure (Op). The systematic change in Op during deposition has been used to control the electrical characteristics and energy bandgap of a-SZTO. As Op increased, the electrical properties degraded, while the energy bandgap increased systematically. This is mainly due to the change in the oxygen vacancy inside the a-SZTO thin film by controlling Op. Changes in oxygen vacancies have been observed by using X-ray photoelectron spectroscopy (XPS) and investigated by analyzing the variation in density of states (DOS) inside the energy bandgaps. In addition, energy bandgap parameters, such as valence band level, Fermi level, and energy bandgap, were extracted by using ultraviolet photoelectron spectroscopy, Kelvin probe force microscopy, and high-resolution electron energy loss spectroscopy. As a result, it was confirmed that the difference between the conduction band minimum and the Fermi level in the energy bandgap increased systematically as Op increases. This shows good agreement with the measured results of XPS and DOS analyses.

show abstract

“…Examples are amorphous, polycrystalline, c -axis-aligned crystalline (CAAC), , and nanocrystalline (nc) IGZO. , As its production by reactive sputtering at room temperature is straightforward, amorphous IGZO (a-IGZO) is widely studied by many research groups. In particular, many reports describe the effect of varying R O 2 for room-temperature sputtered IGZO. ,− The formation of polycrystalline IGZO can be achieved by annealing a-IGZO thin films at temperatures above 600 °C, but it leads to severe TFT performance degradation . CAAC IGZO is obtained by sputtering at increased T sub and R O 2 with rare exceptions .…”

Section: Introductionmentioning

confidence: 99%

Systematic Study on the Amorphous, C-Axis-Aligned Crystalline, and Protocrystalline Phases in In–Ga–Zn Oxide Thin-Film Transistors

Glushkova

Dekkers

Nag

et al. 2021

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

In an effort to fabricate In–Ga–Zn oxide (IGZO) thin-film transistors (TFTs) that combine high performance and high stability, we optimize sputtering conditions to create devices based on different IGZO phases: amorphous, c-axis-aligned crystalline (CAAC), and a transition between them, which is introduced here as protocrystalline IGZO. For this, we study the performance of TFTs based on thin films of IGZO sputtered at different substrate temperatures T sub and oxygen flow ratios R O2 . While T sub is the principal phase-determining parameter, R O2 can be further optimized to enhance IGZO TFT characteristics. For both amorphous IGZO and CAAC IGZO, the best TFT performance and the best TFT bias stress stability are found under different sputtering conditions. In contrast, the protocrystalline IGZO shows a convergence of the highest TFT performance and the best bias stress stability, observed for an IGZO film sputtered at T sub = 200 °C and R O2 = 20%.

show abstract

Oxygen partial pressure ratio modulated electrical performance of amorphous InGaZnO thin film transistor and inverter

Cited by 21 publications

References 28 publications

Study of the Correlation between the Amorphous Indium-Gallium-Zinc Oxide Film Quality and the Thin-Film Transistor Performance

Study of the Correlation between the Amorphous Indium-Gallium-Zinc Oxide Film Quality and the Thin-Film Transistor Performance

Investigation on energy bandgap states of amorphous SiZnSnO thin films

Systematic Study on the Amorphous, C-Axis-Aligned Crystalline, and Protocrystalline Phases in In–Ga–Zn Oxide Thin-Film Transistors

Contact Info

Product

Resources

About