Oxygen plasma pre-treatments for high quality homoepitaxial CVD diamond deposition

Tallaire, Alexandre; Achard, Jocelyn; Silva, F.; Sussmann, R.S.; Gicquel, A.; Rzepka, E.

doi:10.1002/pssa.200405164

Cited by 93 publications

(52 citation statements)

References 2 publications

(1 reference statement)

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“…Meanwhile, it has been showed in the several previous studies that the polishing defects of the diamond substrate propagate into homoepitaxial layers, leading to plastic deformations and trapping of carriers into deep defects [8][9][10][11][12][13]. In a previous study [14], it has been showed that a plasma etching treatment applied to the substrate before film growth can remove defects of the Ib (100) HPHT diamond substrates and induces an increase of the homoepitaxial diamond film quality.…”

Section: Introductionmentioning

confidence: 99%

Defect analysis and excitons diffusion in undoped homoepitaxial diamond films after polishing and oxygen plasma etching

Volpe

Muret

Omnès

et al. 2009

Diamond and Related Materials

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Several 65 µm thick epitaxial diamond films prepared on (100) Ib substrates by high power, pulsed microwave plasma assisted chemical vapour deposition (HP-PMPCVD) are studied as a function of surface treatments by cathodoluminescence (CL) and photoluminescence (PL) spectroscopies. They are either as-grown, or polished, or etched by a microwave oxygen plasma, or after applying subsequently the two last processes. In CL spectra, bands due to defects occur at 2.3 eV, 3.07 eV, 3.6 eV and 4.7 eV, the last one being specific of polished surfaces, with nearly no contrast in the luminescence image, contrary to other CL images. A fundamental result consists in demonstrating that the defects induced by polishing can be removed by oxygen plasma etching. Additionally, in order to assess how luminescence spectra originate from a peculiar depth or not, a bevelled sample is studied. PL spectra are acquired on the sample side while CL spectra are measured at several points on the bevel top side till to the Ib substrate. Comparison of the two sets of result show that the H3 signal originates from the Ib substrate even if it is present in the CL spectra of the film. An analysis of the change in the intensity of the TO free exciton line, defect bands and H3 signal, along decreasing photon energies, as a function of the thickness of the remaining HP-PMPCVD film, is performed with the help of a model taking the diffusion of the unrecombined excitonic pairs and the re-excited photoluminescence into account. CL images recorded at specific wavelengths, which do not show inverted contrast, are also assessed. From these data, the exciton diffusion length is evaluated to 11 µm in the major part of the epitaxial layer except for the first 20 µm close to the Ib substrate where it decreases down to 2 µm. This study sheds light on the interpretation of luminescence spectra excited by an electron beam in undoped diamond layers. Defects bands due to damages induced by polishing and etching processes are also documented.

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Section: Introductionmentioning

confidence: 99%

Defect analysis and excitons diffusion in undoped homoepitaxial diamond films after polishing and oxygen plasma etching

Volpe

Muret

Omnès

et al. 2009

Diamond and Related Materials

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“…It is not expected that the addition of Ar is crucial, however it has been previously reported to be effective in increasing the etching rate under certain conditions [185]. The aim of this step was to remove any non-diamond carbon residue that may remain on the surface of the sample, which could act as unwanted nucleation sites.…”

Section: Resultsmentioning

confidence: 99%

Novel Single Photon Emitters Based on Color Centers in Diamond

Aharonovich¹,

Castelletto²,

Prawer³

2011

AIP Conference Proceedings

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Exploitation of emerging quantum technologies requires efficient fabrication of key building blocks. Single photon sources are one of these fundamental constituents that are presently pushing the bounds of existing materials and fabrication techniques. Color centers in diamond are very attractive in this respect since they are the only photostable solid-state single photon emitters operating at room temperature known to date.The Nitrogen-Vacancy (NV) complex is one example of such an optical center and has been subject to intensive research due to the availability of optical readout of its individual electronic spin state. However, the NV center has fundamental limitations: strong phonon coupling of the excited state which results in a broad photoluminescence spectrum (~ 100 nm) of which the zero-phonon line makes up only 4%. Emission of single photons in the zero phonon line is then extremely weak, typically on the order of a few thousands of photons per second. Such count rates are insufficient for the realization of advanced quantum information processing protocols.To move beyond the limitations of the NV there is an emerging need to identify and fabricate novel diamond based single photon emitters with improved photo-physical characteristics. Development of such emitters is the main goal of this thesis.We first concentrate on the recent progress in materials science and fabrication techniques of high quality nanodiamond crystals. We demonstrate the ability to grow high quality, submicron sized diamond crystals with a control over their final size and density using a microwave assisted chemical vapor deposition.We then study two methodologies to engineer diamond based single photon emitters in the grown nanodiamonds. In the first, nickel is implanted into the substrate onto which the nanocrystals are subsequently grown. During the diamond growth, the substrate is slightly etched and the nickel atoms diffuse and incorporate into the growing crystals. In the second we employ direct ion implantation of nickel into already deposited individual diamond nanocrystals. Optical and correlation spectroscopy measurements reveal that these methodologies are effective to fabricate nickel related single photon emitters, with zero phonon lines centered in the near infra-red and a short excited state lifetime (~3 ns).ii Furthermore, the ability of diamond to host various luminescence centers prompted the discovery of a new class of ultra bright single photon emitters. These new emitters found in diamond crystals grown on sapphire substrate and assigned to chromium, which is present in the substrate and incorporated into the crystal during the growth. Nanodiamonds hosting these centers deliver outstanding performance such as narrow photoluminescence in the near infra-red and ultra bright single photon emission with count rate of ~ 3.2×10 6 counts/s -the brightest single photon source known to date.Importantly, some of the emitters exhibit a photon statistics without any photon bunching at saturation, indicating a two-...

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“…New species formed in the plasma (i.e., O -and OH -) etch away impurities (hydrogen, and sp 2 carbon) and defects on growth surface more efficiently than atomic hydrogen, and therefore improve the diamond quality. Furthermore, oxygen addition can hinder diamond cracks, thereby promoting growth of thicker single crystal layers [29,30].…”

Section: Optical Characterization Of Cvd Single-crystal Diamondmentioning

confidence: 99%

Developments in synthesis, characterization, and application of large, high-quality CVD single crystal diamond

Liang

Meng

Yan

et al. 2013

J. Superhard Mater.

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Oxygen plasma pre-treatments for high quality homoepitaxial CVD diamond deposition

Cited by 93 publications

References 2 publications

Defect analysis and excitons diffusion in undoped homoepitaxial diamond films after polishing and oxygen plasma etching

Defect analysis and excitons diffusion in undoped homoepitaxial diamond films after polishing and oxygen plasma etching

Novel Single Photon Emitters Based on Color Centers in Diamond

Developments in synthesis, characterization, and application of large, high-quality CVD single crystal diamond

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