Oxygen-Plasma-Treated Al/TaOX/Al Resistive Memory for Enhanced Synaptic Characteristics
Gyeongpyo Kim,
Seoyoung Park,
Minsuk Koo
et al.
Abstract:In this study, we investigate the impact of O2 plasma treatment on the performance of Al/TaOX/Al-based resistive random-access memory (RRAM) devices, focusing on applications in neuromorphic systems. Comparative analysis using scanning electron microscopy and X-ray photoelectron spectroscopy confirmed the differences in chemical composition between O2-plasma-treated and untreated RRAM cells. Direct-current measurements showed that O2-plasma-treated RRAM cells exhibited significant improvements over untreated R… Show more
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