Oxygen Pressure Influence on Properties of Nanocrystalline LiNbO3 Films Grown by Laser Ablation

Вакулов, З. Е.; Zamburg, Evgeny; Khakhulin, Daniil; Geldash, Andrey; Голосов, Д. А.; Zavadski, S. M.; Miakonkikh, Andrey V.; Руденко, К. В.; Достанко, А. П.; He, Zhubing; Агеев, О. А.

doi:10.3390/nano10071371

Cited by 12 publications

(10 citation statements)

References 56 publications

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“…According to Refs. [ 41 , 42 ], XPS peaks from Nb 3 d are decomposed into 3 d 3/2 and 3 d 5/2 contributions: LiNbO 3 (209.41 and 206.63 eV), Nb 2 O 5 (209.78 eV, 207.03 eV), NbO 2 (208.23 and 205.67 eV), and NbO (207.47 and 204.67 eV). We found that the subpeak at the binding energy ( E B ) of about 204 eV increased with increasing etching time after 1050 s. To understand this behavior and to clarify the mechanism, the fittings were performed in the XPS spectra obtained at 1050 s and 1300 s, as shown in Figure 2 c,d, respectively.…”

Section: Resultsmentioning

confidence: 99%

X-ray Photoemission Spectroscopy Study of Uniaxial Magnetic Anisotropy Induced in a Ni Layer Deposited on a LiNbO3 Substrate

et al. 2021

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The competition between magnetic shape anisotropy and the induced uniaxial magnetic anisotropy in the heterojunction between a ferromagnetic layer and a ferroelectric substrate serves to control magnetic domain structures as well as magnetization reversal characteristics. The uniaxial magnetic anisotropy, originating from the symmetry breaking effect in the heterojunction, plays a significant role in modifying the characteristics of magnetization dynamics. Magnetoelastic phenomena are known to generate uniaxial magnetic anisotropy; however, the interfacial electronic states that may contribute to the uniaxial magnetic anisotropy have not yet been adequately investigated. Here, we report experimental evidence concerning the binding energy change in the ferromagnetic layer/ferroelectric substrate heterojunction using X-ray photoemission spectroscopy. The binding energy shifts, corresponding to the chemical shifts, reveal the binding states near the interface. Our results shed light on the origin of the uniaxial magnetic anisotropy induced from the heterojunction. This knowledge can provide a means for the simultaneous control of magnetism, mechanics, and electronics in a nano/microsystem consisting of ferromagnetic/ferroelectric materials.

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Section: Resultsmentioning

confidence: 99%

X-ray Photoemission Spectroscopy Study of Uniaxial Magnetic Anisotropy Induced in a Ni Layer Deposited on a LiNbO3 Substrate

et al. 2021

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“…The crystal structure of the obtained LiNbO3 films was studied by the X-ray diffraction (XRD) method using a Rigaku MiniFlex 600 (Rigaku Co., Tokyo, Japan). The charge carrier concentration and mobility were measured using the Hall effect technique by an Ecopia HMS-3000 measurement system (Ecopia Co., Anyang, Korea) [28]. Figure 2 shows the dependence of film thickness of the obtained LiNbO3 on laser pulse energy.…”

Section: Methodsmentioning

confidence: 99%

“…The crystal structure of the obtained LiNbO 3 films was studied by the X-ray diffraction (XRD) method using a Rigaku MiniFlex 600 (Rigaku Co., Tokyo, Japan). The charge carrier concentration and mobility were measured using the Hall effect technique by an Ecopia HMS-3000 measurement system (Ecopia Co., Anyang, Korea) [28]. Our results indicate that with an increase in the laser pulse energy from 180 to 220 mJ, the thickness of the LiNbO3 films increased from 132.3 ± 8.8 nm (the deposition rate of the film was 1.47 nm/min) to 153.9 ± 10.5 nm (film deposition rate 1.71 nm/min).…”

Section: Linbo3 Thin Film Growthmentioning

confidence: 99%

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Piezoelectric Energy Harvester Based on LiNbO3 Thin Films

et al. 2020

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This paper reports the results of the influence of the energy of laser pulses during laser ablation on the morphology and electro-physical properties of LiNbO3 nanocrystalline films. It is found that increasing laser pulse energy from 180 to 220 mJ results in the concentration of charge carriers in LiNbO3 films decreasing from 8.6 × 1015 to 1.0 × 1013 cm−3, with the mobility of charge carriers increasing from 0.43 to 17.4 cm2/(V·s). In addition, experimental studies of sublayer material effects on the geometric parameters of carbon nanotubes (CNTs) are performed. It is found that the material of the lower electrode has a significant effect on the formation of CNTs. CNTs obtained at the same growth time on a sample with a Cr sublayer have a smaller diameter and a longer length compared to samples with a V sublayer. Based on the obtained results, the architecture of the energy nanogenerator is proposed. The current generated by the nanogenerator is 18 nA under mechanical stress of 600 nN. The obtained piezoelectric nanogenerator parameters are used to estimate the parameters of the hybrid-carbon-nanostructures-based piezoelectric energy converter. Obtained results are promising for the development of efficient energy converters for alternative energy devices based on lead-free ferroelectric films.

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“…Moreover, the PLD method is promising for the manufacture of prototyping elements of ReRAM neuromorphic systems, since it allows the formation of films of metal oxides in a wide range of parameters. In PLD, the composition and properties of the deposited layers are largely determined by the pressure in the growth chamber, the composition of the background pressure [ 52 ], and the deposition duration [ 53 ]. Thus, the purpose of this work is to study the influence of geometric and electrophysical parameters on the effect of resistive switching in vanadium oxide films obtained by pulsed laser deposition.…”

Section: Introductionmentioning

confidence: 99%

The Effect of Growth Parameters on Electrophysical and Memristive Properties of Vanadium Oxide Thin Films

et al. 2020

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We have experimentally studied the influence of pulsed laser deposition parameters on the morphological and electrophysical parameters of vanadium oxide films. It is shown that an increase in the number of laser pulses from 10,000 to 60,000 and an oxygen pressure from 3 × 10−4 Torr to 3 × 10−2 Torr makes it possible to form vanadium oxide films with a thickness from 22.3 ± 4.4 nm to 131.7 ± 14.4 nm, a surface roughness from 7.8 ± 1.1 nm to 37.1 ± 11.2 nm, electron concentration from (0.32 ± 0.07) × 1017 cm−3 to (42.64 ± 4.46) × 1017 cm−3, electron mobility from 0.25 ± 0.03 cm2/(V·s) to 7.12 ± 1.32 cm2/(V·s), and resistivity from 6.32 ± 2.21 Ω·cm to 723.74 ± 89.21 Ω·cm. The regimes at which vanadium oxide films with a thickness of 22.3 ± 4.4 nm, a roughness of 7.8 ± 1.1 nm, and a resistivity of 6.32 ± 2.21 Ω·cm are obtained for their potential use in the fabrication of ReRAM neuromorphic systems. It is shown that a 22.3 ± 4.4 nm thick vanadium oxide film has the bipolar effect of resistive switching. The resistance in the high state was (89.42 ± 32.37) × 106 Ω, the resistance in the low state was equal to (6.34 ± 2.34) × 103 Ω, and the ratio RHRS/RLRS was about 14,104. The results can be used in the manufacture of a new generation of micro- and nanoelectronics elements to create ReRAM of neuromorphic systems based on vanadium oxide thin films.

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Oxygen Pressure Influence on Properties of Nanocrystalline LiNbO3 Films Grown by Laser Ablation

Cited by 12 publications

References 56 publications

X-ray Photoemission Spectroscopy Study of Uniaxial Magnetic Anisotropy Induced in a Ni Layer Deposited on a LiNbO3 Substrate

X-ray Photoemission Spectroscopy Study of Uniaxial Magnetic Anisotropy Induced in a Ni Layer Deposited on a LiNbO3 Substrate

Piezoelectric Energy Harvester Based on LiNbO3 Thin Films

The Effect of Growth Parameters on Electrophysical and Memristive Properties of Vanadium Oxide Thin Films

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