Oxygen sensitivity of perovskite-type dielectric thin films

Oxygen sensitivity of SrTiO3 thin film prepared using atomic layer deposition

“…Then, we will show the results of our previous study [3] on the oxygen sensitivity of SrTiO 3 -based and BaTiO 3 -based PLD thin films in order to explain why we pick SrTiO 3 from the crowd of perovskites. Fig.…”

“…In contrast, photogenerated valence band holes are deeply trapped near oxygen ligands and cannot contribute to the electrical conduction in SrTiO 3 . In the previous studies [2,3], it was revealed that the oxygen sensitivity of UV-irradiated-SrTiO 3 does not deteriorate, unlike Nb:SrTiO 3 (Nb 5+ doping could lower the resistance; however, the sensitivity could deteriorate.). UV light (wavelength = 320 nm, energy = 3.88 eV) was introduced into the test chamber through an optical-fiber-based guide and optical bandpass filters from a Xe lamp system (Asahi Spectra, MAX301-FBD UV).…”

“…After the example of our previous studies [2,3], the effect of ultraviolet (UV) light irradiation on the oxygen sensitivity of SrTiO 3 thin films was investigated. After the SrTiO 3 thin film is illuminated with photons with energies close to or greater than the band gap (3.2 eV), electrons can leave the valence band, resulting in the generation of conduction band electrons and valence band holes.…”

“…In our previous studies [2,3], we reported the sensing performance of epitaxially grown SrTiO 3 -based thin films prepared using pulsed laser deposition (PLD). We observed that the SrTiO 3 -based PLD thin film is highly sensitive to oxygen [2,3].…”

“…In our previous studies [2,3], we reported the sensing performance of epitaxially grown SrTiO 3 -based thin films prepared using pulsed laser deposition (PLD). We observed that the SrTiO 3 -based PLD thin film is highly sensitive to oxygen [2,3]. Although PLD is ideal for basic research since epitaxially grown films can be obtained by choosing appropriate substrates, it is not feasible for mass production since the use of plumes prevents the deposition of materials on the entire surface of wafers, on which devices are formed.…”