Oxygen treatment effects on properties of MgO thin films grown on single-crystalline diamond (100)

Fabrication techniques and material properties of dielectric MgO thin films—A status review

“…In the case of the sample prepared by oxygen ion bombardment, uniform and fine needle-shaped grain growth occurs on the surface, whereas the deposited film by argon ion bombardment has a smooth surface. Effect of oxygen pressure during the MgO deposition on surface roughness was also reported by Lee and Ito [1][2][3]. It was observed that both MgO growth rate and surface roughness increased with increasing the amount of oxygen supply.…”

“…Transparent oxides are obtained by post-oxidation or by introducing oxygen during evaporation. The variation of resistivity of the magnesia film processed on CVD diamond h1 0 0i at RT and further annealed at 573-773 K in oxygen ambient/O 2 plasma has been investigated [1]. Resistivities are linearly increased with increasing the annealing temperature.…”

“…However, the peak intensities related to the MgO lattice were too weak to recognize the presence of MgO crystallites, so either annealing in oxygen ambient or oxygen plasma treatment was required to prepare good quality MgO films [1]. On the other hand, when the film was deposited in oxygen ambient, most of the re-evaporated Mg species from the substrates were captured by supplied oxygen to form MgO species [2].…”

“…Alternately, sputtered MgO films on sulfur passivated GaAs exhibited a high resistivity of about 1.38 Â 10 +11 V cm [54]. Lee and Ito [1] reported the temperature dependence of resistivity, mobility and carrier concentration of EB evaporated MgO films at elevated temperature from RT to 600 K in nitrogen ambient. The activation energy related to this thermal process was estimated as 0.61 eV.…”