2022
DOI: 10.1016/j.mssp.2022.106631
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Oxygen vacancies and defects tailored microstructural, optical and electrochemical properties of Gd doped CeO2 nanocrystalline thin films

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Cited by 26 publications
(5 citation statements)
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“…The UV−visible spectrum of pristine and Prdoped CeO 2 showed the absorption below 400 nm, due to the charge transfer from O 2− 2p to Ce 4+ 4f orbitals in CeO 2 . 39 An estimate of the optical band gap E g was made by using the following equation for a semiconductor: 40…”
Section: ■ Results and Discussionmentioning
confidence: 99%
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“…The UV−visible spectrum of pristine and Prdoped CeO 2 showed the absorption below 400 nm, due to the charge transfer from O 2− 2p to Ce 4+ 4f orbitals in CeO 2 . 39 An estimate of the optical band gap E g was made by using the following equation for a semiconductor: 40…”
Section: ■ Results and Discussionmentioning
confidence: 99%
“…The UV–visible spectrum of pristine and Pr-doped CeO 2 showed the absorption below 400 nm, due to the charge transfer from O 2– 2p to Ce 4+ 4f orbitals in CeO 2 . An estimate of the optical band gap E g was made by using the following equation for a semiconductor: false( α h ν false) n = C ( h ν E normalg ) where α is the absorption coefficient, h is the photon energy, C is a constant, and n = 1/2 for an indirectly allowed transition. For the direct transition, the plots of (α h ν) 2 versus photon energy ( h ν) of Pr x Ce 1– x O 2 are shown in Figure D.…”
Section: Resultsmentioning
confidence: 99%
“…The absorbance response depends on oxygen vacancies, impurity centers, surface roughness, and optical band gap. [ 35 ] An exponential curve is obtained for all three thin layers, where the peak of the plot is reached when the energy of the incident photon is equal to the absorption band gap energy, and a decay of the absorption is observed as the wavelength increases. Also, the absorption plots show a red shift for all Co‐doped Mn 3 O 4 thin layers compared to undoped Mn 3 O 4 .…”
Section: Resultsmentioning
confidence: 99%
“…al. [68] presented Gd-doped CeO2 nanocrystalline thin films using spray pyrolysis and reported that the peak asymmetry and broadening of Raman spectra could be attributed to the existence of an oxygen vacancy and Ce 3+ , which changed with the addition of Gd 3+ . With a gradual increase in crystal size, there may be a simultaneous enhancement of defects in the thin film and the growth of other The root mean square values of the surface roughness (R q ) of 10-GDC fluctuated with the annealing temperature and had a maximum value of 18.08 nm at 600 • C, with the lowest value of 11.32 nm for as-evaporated films.…”
Section: Characterization Of Thin Filmsmentioning
confidence: 99%
“…al. [68] presented Gd-doped CeO 2 nanocrystalline thin films using spray pyrolysis and reported that the peak asymmetry and broadening of Raman spectra could be attributed to the existence of an oxygen vacancy and Ce 3+ , which changed with the addition of Gd 3+ . With a gradual increase in crystal size, there may be a simultaneous enhancement of defects in the thin film and the growth of other crystalline phases [67].…”
Section: Characterization Of Thin Filmsmentioning
confidence: 99%