Oxygen vacancy and dilute ferromagnetism of ZnGa2O4 doped with Co at the octahedral site

We present a study of Co doping in the wide-bandgap spinel Mg3Si6As8 (P4332) at the level of the density functional theory. It is found that among all considered doping sites in the compound, the substitutional doping at the tetrahedral sites is by far the most stable, and the exchange interactions between substitutional Co ions at the tetrahedral sites yield antiferromagnetic order. The crystal field effect in the splitting of the Co-d orbitals as well as the nature in the magnetic couplings between CoMgtet is revealed, and the optimal doping for the highest Néel temperature is found.

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Oxygen vacancy and dilute ferromagnetism of ZnGa2O4 doped with Co at the octahedral site

Abstract: We report magnetism and structure of a diluted magnetic semiconductor Zn [Ga 0.97

Cited by 2 publications

References 38 publications

Structural and photodetector characteristics of Zn and Al incorporated ZnGa2O4 films via co-sputtering

Structural and photodetector characteristics of Zn and Al incorporated ZnGa2O4 films via co-sputtering

Dilute magnetism in Co-doped spinel Mg3Si6As8

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