Oxygen-vacancy-related dielectric anomaly in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">Ca</mml:mi><mml:msub><mml:mi mathvariant="normal">Cu</mml:mi><mml:mn>3</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">Ti</mml:mi><mml:mn>4</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>12</mml:mn></mml:msub></mml:mrow></mml:math>: Post-sintering annealing studies

Wang, C. C.; Zhang, L. W.

doi:10.1103/physrevb.74.024106

Cited by 88 publications

(38 citation statements)

References 18 publications

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“…The existence of a peak in the real part of the dielectric constant was reminded of the ferroelectric phase transition [17][18][19][20]. The cooperation of the localized positive and negative carriers as well as the Maxwell-Wagner-type relaxation can also generate a dielectric peak [21][22][23]. However, the frequency independence of the peak position as well as the absence of the dielectric peak in the cooling process in our experiments excludes these possibilities.…”

Section: Resultscontrasting

confidence: 41%

Dielectric properties of spinel ceramic Fe1.8V1.2O4

2012

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Spinel vanadates possess rich physics arising from the interaction among spin, orbital and lattice degrees of freedom. We report the dielectric properties of polycrystalline Fe 1.8 V 1.2 O 4 . A thermally activated dielectric relaxation appeared in low temperature due to the inhomogeneous conductivity between grains and grain boundaries. We found an artificial ferroelecticity in this sample. An abnormal frequency-independent dielectric peak appeared at room temperature when the samples were measured during warming in ambient air. However, this peak disappeared in the following cooling process. By dielectric frequency spectrum and equivalent circuit analysis in detail, we found the sample had a surface layer in warming but not in cooling process. We also confirmed that this surface layer was induced by the adsorption of water, which is responsible for the dielectric peak. system. The present paper studied the temperature and frequency dependent dielectric property of the Fe 1.8 V 1.2 O 4 polycrystalline. We observed a dielectric relaxation in a low temperature range and a frequency independent dielectric peak in a high temperature range.

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Section: Resultscontrasting

confidence: 41%

Dielectric properties of spinel ceramic Fe1.8V1.2O4

2012

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“…For reaction 3, it is proposed based on the limited diffusion of oxygen at grain boundary during the cooling stage, which prevents reoxidation of partial Cu + into Cu 2+ ions. The compensation is possibly due to the partial reduction of Ti 4+ to Ti 3+ ions on the B site sub-lattice [9,17]. Cu + on Cu 2+ site and Ti 3+ on Ti 4+ site carries effective negatively charges of and , respectively, which turns the grains into a semiconductor.…”

mentioning

confidence: 99%

Phase structure, microstructure and broadband dielectric response of Cu nonstoichiometry CaCu3Ti4O12 ceramic

Abu

Mohamed

Ain

et al. 2016

Journal of Alloys and Compounds

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“…So the dielectric anomaly behavior in the Ta-LTO crystal sample might be related to the oxygen vacancies. An oxygen-related dielectric anomaly has been reported in different material systems [32][33][34]. Two oxygen-vacancy-related relaxation processes have been reported [35]: a dipolar relaxation related to the hopping motions of oxygen vacancy and a Maxwell-Wagner relaxation as the defects were blocked by the interface on sample contacts.…”

Section: Resultsmentioning

confidence: 99%

Growth and Dielectric Properties of Ta-Doped La2Ti2O7 Single Crystals

Wang

et al. 2018

Crystals

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High-quality Ta-doped La 2 Ti 2 O 7 (Ta-LTO) single crystal of about 40 mm in length and 5 mm in diameter was successfully prepared by the optical floating zone method. An X-ray rocking curve reveals that the crystal of LTO has excellent crystalline quality. As-grown crystals were transparent after annealing in air and the transmittance is up to 76% in the visible and near-infrared region. X-ray diffraction showed that this compound possessed a monoclinic structure with P2 1 space group. The dielectric properties were investigated as functions of temperature (0~300 • C) and frequency (10 2 Hz~10 5 Hz). Dielectric spectra indicated an increase in the room-temperature dielectric constant accompanied by a drop in the loss tangent as a result of the Ta doping. One relaxation was observed in the spectra of electric modulus, which was ascribed to be related to the oxygen vacancy. The dielectric relaxation with activation energy of 1.16 eV is found to be the polaron hopping caused by the oxygen vacancies.

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Oxygen-vacancy-related dielectric anomaly inCaCu3Ti4O12: Post-sintering annealing studies

Cited by 88 publications

References 18 publications

Dielectric properties of spinel ceramic Fe1.8V1.2O4

Dielectric properties of spinel ceramic Fe1.8V1.2O4

Phase structure, microstructure and broadband dielectric response of Cu nonstoichiometry CaCu3Ti4O12 ceramic

Growth and Dielectric Properties of Ta-Doped La2Ti2O7 Single Crystals

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