Conducting polymers such as poly(3,4-ethylenedioxythiophene)
(PEDOT)
are widely researched for application in electronic devices. Researcher’s
look to exploit the ability of these polymers to conduct electrical
charge. To induce conductivity, the polymers are doped with counterions;
for PEDOT, this is typically done with poly(styrenesulfonate) or tosylate
(Tos). The Tos anions inserted within the PEDOT nanostructure stabilize
positive defects (holes) on the polymer’s conjugated backbone,
which, in turn, facilitates electrical conduction. In this study,
we use X-ray photoelectron spectroscopy to investigate the Tos doping
of PEDOT within the outermost region (<15 nm) of electrochemically
oxidized or reduced PEDOT:Tos nanoscale films. Computation of the
predicted density of states from density functional theory studies
is also conducted to aid in interpreting the ultraviolet photoelectron
spectroscopy spectra. We observe that the doping of PEDOT:Tos is more
complex than first thought, likely involving the nonionic triblock
copolymer used during PEDOT’s oxidative polymerization. This
hypothesis is corroborated by time-of-flight secondary-ion mass spectrometry
measurements on the outer 2 nm of the oxidized and reduced PEDOT:Tos.
The observation of complex and heightened doping near the surface
opens opportunities for the deliberate surface engineering of PEDOT:Tos
nanofilms in polymer electronic applications such as electrochemical
transistors and electrical connections.