Oxynitride perovskite LaTiOxNy thin films deposited by reactive sputtering

Paven-Thivet, Claire Le; Gendre, Laurent Le; Castrec, J. Le; Cheviré, François; Tessier, Franck; Pinel, Jacques

doi:10.1016/j.progsolidstchem.2007.01.012

Cited by 38 publications

(35 citation statements)

References 15 publications

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“…We have previously suggested the existence of a solid solution, labelled LaTiO x N y [13]. The present results of transmittance and EDS measurements seem to confirm this hypothesis.…”

Section: Films Deposited At Fixed Substrate Temperature T S = 800°csupporting

confidence: 88%

“…So, the present results have to be taken as relative values. Nevertheless, previous wavelength dispersive spectrometry (WDS) measurements made on our films did support the results found by EDS [13].…”

Section: Contents Lists Available At Sciencedirectsupporting

confidence: 85%

“…Argon and nitrogen were introduced in the chamber after the base pressure had reached a value below 5 10 − 5 Pa. The polycrystalline LaTiO 2 N target (40 mm diameter) was made by ourselves [13]. It was sputtered with an input power of 30 W. Films were deposited by varying the substrate temperature (T S ) and the nitrogen ratio in the plasma (% N 2 plasma).…”

Section: Methodsmentioning

confidence: 99%

“…Very few publications report on their thin film deposition. We reported on La-Ti-O-N films deposited by sputtering deposition [12,13]. (La 1 − x Sr x )-Ti-O-N films are reported as deposited by sol gel method [14] and laser ablation [15].…”

Section: Introductionmentioning

confidence: 99%

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Structural and dielectric properties of oxynitride perovskite LaTiOxNy thin films

et al. 2008

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“…We have previously suggested the existence of a solid solution, labelled LaTiO x N y [13]. The present results of transmittance and EDS measurements seem to confirm this hypothesis.…”

Section: Films Deposited At Fixed Substrate Temperature T S = 800°csupporting

confidence: 88%

Section: Contents Lists Available At Sciencedirectsupporting

confidence: 85%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Structural and dielectric properties of oxynitride perovskite LaTiOxNy thin films

et al. 2008

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“…After annealing the La layer at the surface is reconstructed and nitrogen deficient, but an aqua regia treatment restores the perfect geometry and stoichiometry, leading to a much improved photocatalytic activity 21 . LaTiO 2 N thin films were found to most commonly expose (001) orientated surfaces 22,23 but it was also shown that different substrates promote other surface orientations with distinctively different photocatalytic activities 24 .…”

Section: Introductionmentioning

confidence: 99%

Surface structure and anion order of the oxynitride LaTiO₂N

Ninova

2017

J. Mater. Chem. A

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Oxynitrides are promising materials for water splitting under visible light. Members of this class of semiconductors that crystallise in the perovskite structure are often characterised by O/N disorder, while some studies observe 2D cischain ordering of the M-N-M bonds in the bulk. Despite the fact that the surface structure and composition is expected to have a significant influence on the surface chemistry and therefore the photocatalytic activity, little is known about the O/N arrangement at surfaces of these materials. In the present study, we investigate the surface structure of LaTiO 2 N, a particularly promising candidate for water splitting, using density functional theory (DFT) calculations. Based on slab calculations with different anion order we find that the N atoms prefer to form trans-chains at the (001) surface, as opposed to the bulk. This is governed by the electrostatic stability that is optimal for alternating charge-neutral (LaN)-(TiO 2 ) atomic layers. We show that polar surfaces that do not fulfil this requirement will electronically or structurally reconstruct. Our results predict that in contact with vacuum, the LaTiO 2 N (001) surface will preferentially be LaN-terminated.

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Synthesis of Lanthanum Tungsten Oxynitride Perovskite Thin Films

Talley

Mangum

Perkins

et al. 2019

Adv Elect Materials

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Ternary metal‐oxide material systems commonly crystallize in the perovskite crystal structure, which is utilized in numerous electronic applications. In contrast to oxides, there are no known nitride perovskites, likely due to the competition with oxidation, which makes the formation of pure nitride materials difficult and synthesis of oxynitride materials more common. While deposition of oxynitride perovskite thin films is important for many electronic applications, it is difficult to control oxygen and nitrogen stoichiometry. Lanthanum tungsten oxynitride (LaWN3−δOδ) thin films with varying La:W ratio are synthesized by combinatorial sputtering and characterized for their chemical composition, crystal structure, and microstructure. A three‐step synthesis method, which involves co‐sputtering, capping layer deposition, and rapid thermal annealing, is established for producing crystalline thin films while minimizing the oxygen content. Elemental depth profiling results show that the cation‐stoichiometric films contain approximately one oxygen for every five nitrogen (δ = 0.5). Synchrotron‐based diffraction indicates a tetragonal perovskite crystal structure. These results are discussed in terms of the perovskite tolerance factors, octahedral tilting, and bond valence. Overall, this synthesis and characterization is expected to pave the way toward future thin film property measurements of lanthanum tungsten oxynitrides and eventual synthesis of oxygen‐free nitride perovskites.

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Oxynitride perovskite LaTiOxNy thin films deposited by reactive sputtering

Cited by 38 publications

References 15 publications

Structural and dielectric properties of oxynitride perovskite LaTiOxNy thin films

Structural and dielectric properties of oxynitride perovskite LaTiOxNy thin films

Surface structure and anion order of the oxynitride LaTiO₂N

Synthesis of Lanthanum Tungsten Oxynitride Perovskite Thin Films

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Oxynitride perovskite LaTiOxNy thin films deposited by reactive sputtering

Cited by 38 publications

References 15 publications

Structural and dielectric properties of oxynitride perovskite LaTiOxNy thin films

Structural and dielectric properties of oxynitride perovskite LaTiOxNy thin films

Surface structure and anion order of the oxynitride LaTiO2N

Synthesis of Lanthanum Tungsten Oxynitride Perovskite Thin Films

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Surface structure and anion order of the oxynitride LaTiO₂N