2010
DOI: 10.1016/j.electacta.2010.03.063
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Ozone-oxygen gas enhanced passivation of pure iron

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Cited by 6 publications
(3 citation statements)
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“…Figure b shows the relative areas of PL spectra. The covering of oxygen vacancies was most active in the oxygen atmosphere as the generated ozone not only accelerated the decomposition of the ligand but also covered the NCs with oxygen vacancies . XPS O 1s analysis was performed to check the controllability of the oxygen vacancies in ZnO by UV irradiation (Figure ).…”
Section: Results and Discussionmentioning
confidence: 99%
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“…Figure b shows the relative areas of PL spectra. The covering of oxygen vacancies was most active in the oxygen atmosphere as the generated ozone not only accelerated the decomposition of the ligand but also covered the NCs with oxygen vacancies . XPS O 1s analysis was performed to check the controllability of the oxygen vacancies in ZnO by UV irradiation (Figure ).…”
Section: Results and Discussionmentioning
confidence: 99%
“…The covering of oxygen vacancies was most active in the oxygen atmosphere as the generated ozone not only accelerated the decomposition of the ligand but also covered the NCs with oxygen vacancies. 26 XPS O 1s analysis was performed to check the controllability of the oxygen vacancies in ZnO by UV irradiation (Figure 6). The oxygen in ZnO was involved in forming various bonds: O−Zn bonds in the ZnO lattice without any oxygen vacancies confirmed at 530.5 eV and 531.8 eV peak originated from oxygen vacancies (O-V o ) in the lattice.…”
Section: ■ Results and Discussionmentioning
confidence: 99%
“…Once a metal is exposed to the atmospheric environment, an indigenous oxide film will instantaneously form on the metal surface [ 2 ], which makes it impossible to modify the film during its growth. Some methods—such as photon-assisted oxidation [ 5 , 6 ] and ozone treatment [ 7 ]—have been developed for post-processing the native passive films, however, they exhibit limited effects on the corrosion resistance. Low-energy oxygen implantation on the bare metal surface (cleaned by Ar + etching) has recently been reported as a promising method of promoting the growth of metal oxide films [ 8 , 9 ].…”
Section: Introductionmentioning
confidence: 99%