P‐1.11: Back‐End‐of‐Line Compatible Al‐doped Indium Zinc Oxide Transistors with Excellent Thermal Stability

Abstract

In this work, thermal stability of InZnO (IZO) and Al‐doped InZnO (IAZO) transistors are studied. With a consecutive annealing pre‐treatment at 300 ℃ in air, the IAZO transistors show superior electrical properties to the IZO transistors, demonstrating that element Al plays a role as stabilizer for maintaining device performance. Our work paves the way for practical application of the oxide transistors in back‐end‐of‐line (BEOL) scenarios.