P‐1.4: Elevated‐Metal Metal‐Oxide Thin‐Film Transistor with Fluorinated Indium‐Gallium‐Zinc Oxide Channel towards Flexible Applications

Abstract

Towards to the requirements of the low processing temperature for the flexible application, elevated‐metal metal oxide (EMMO) thin‐film transistors with fluorinated indium‐gallium‐zinc oxide (IGZO) channel were fabricated at the highest temperature of 300°C. The effect of Von dependence on channel length was reduced in the fluorinated channel. And the Von of the devices, especially for the short channel with L=2µm, are improved by this fluorination treatment. The results show that the short time plasma treatment is an effective method to decrease the thermal budget and enhance scalability in the flexible application fabrication.

Effects of Yttrium Doping on a-IGZO Thin Films for Use as a Channel Layer in Thin-Film Transistors

“…Oxide semiconductors have recently drawn attention as channel layer materials in various optoelectronic devices, such as active-matrix organic light-emitting diodes (AM-OLEDs) and flexible displays [1][2][3][4][5][6]. Compared to conventional amorphous/polysilicon thin film transistors (TFTs), oxide TFTs have several advantages including their low processing temperature and cost, transparency (wideband gap, >3.1 eV), and good electrical properties (e.g., field-effect mobility) [4,7].…”