2018
DOI: 10.1002/sdtp.12774
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P‐1.6: Effect of Deposition Condition of Passivation Layer on the Performance of Self‐Aligned Top‐Gate a‐IGZO TFTs

Abstract: In this paper, we fabricated self‐aligned top‐gate (SATG) amorphous indium‐gallium‐zinc‐oxide (a‐IGZO) thin‐film transistors (TFTs). The conductive source/drain regions were formed by hydrogen incorporation during the deposition of SiOx or SiNx passivation layer using plasma‐enhanced chemical vapor deposition (PECVD). The effect of passivation layer deposition condition on the electrical performance of self‐aligned top‐gate a‐IGZO TFTs was investigated. It was shown that the source‐drain parasitic resistance (… Show more

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“…(a) Mobility vs subthreshold slope (SS) of literature top-gate IGZO TFTs for various dielectric materials. ,,, (b) Mobility vs SS for IGZO TFTs with solution-processed dielectrics. The circular symbols represent linear mobilities.…”
Section: Resultsmentioning
confidence: 99%
“…(a) Mobility vs subthreshold slope (SS) of literature top-gate IGZO TFTs for various dielectric materials. ,,, (b) Mobility vs SS for IGZO TFTs with solution-processed dielectrics. The circular symbols represent linear mobilities.…”
Section: Resultsmentioning
confidence: 99%