P‐1.9: Characterization of Self‐Aligned Top‐Gate Microcrystalline Silicon Thin Film Transistors

Abstract

Self‐aligned top‐gate microcrystalline silicon (µc‐Si) thin film transistors (TFTs) are fabricated and characterized. By replacing high‐temperature SiO2 with low‐temperature SiO2, the performance of self‐aligned top‐gate µc‐Si TFTs can be greatly improved due to the prevention of hydrogen diffusion into the air. The bridged grain (BG) structure is successfully applied to self‐aligned top‐gate µc‐Si TFTs for the first time. By employing the BG doping inside the channel, all device characteristics are improved in self‐aligned top‐gate µc‐Si TFTs.