P‐1: A Study on the Mechanism of Fluorination Enhanced Thermal Stability of IGZO Thin‐Film Transistors Based on a Kinetic Model of Donor‐Defects

Abstract

The stability against thermal stress of thin‐film transistors based on fluorinated indium‐gallium‐zinc oxide (IGZO:F) is known to be better than that based on IGZO. The mechanism responsible for the improvement has been studied by analyzing the extracted parameters associated with a recently proposed kinetic model governing the oxidation and reduction of donor‐defects in metal‐oxide semiconductors. Compared to those in IGZO, the donor‐defects in IGZO:F are shown to be more easily oxidized but less readily reduced during a heat‐treatment.