P‐1: World's First 85‐in. 8K4K 120Hz 1G1D LCD with Oxide TFT Using Four‐Mask Array Process

Ge, Shi-Min; Li, Shan; Hu, Xiaobin; Gong, Cheng; Zhao, Wenda; Li, Yuzhi; Zheng, Zeke; Dai, Chu-Hong; Liu, Quansheng; Xing, Lei; Li, Guo; Fu, Xin-Bo; Son, Woosung; Xiao, Juncheng; Zhao, Bin

doi:10.1002/sdtp.14874

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“…The intriguing features of O/S, such as reasonable carrier mobility, low-temperature deposition, super steep slope, and excellent low leakage characteristics, have driven the replacement of the amorphous and polycrystalline silicon electronics in the advanced display devices . The implementation of O/S TFTs in commercial AMOLED televisions has been enabled by sputtering the O/S active layer in eighth generation (2160 mm × 2460 mm), because of its large-area scalability and good throughput capability. − …”

Section: Introductionmentioning

confidence: 99%

High-Performance Thin-Film Transistor with Atomic Layer Deposition (ALD)-Derived Indium–Gallium Oxide Channel for Back-End-of-Line Compatible Transistor Applications: Cation Combinatorial Approach

Hur

Kim

Yoon

et al. 2022

ACS Appl. Mater. Interfaces

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In this paper, the feasibility of an indium−gallium oxide (In 2(1-x) Ga 2x O y ) film through combinatorial atomic layer deposition (ALD) as an alternative channel material for back-endof-line (BEOL) compatible transistor applications is studied. The microstructure of random polycrystalline In 2 O y with a bixbyite structure was converted to the amorphous phase of In 2(1−x) Ga 2x O y film under thermal annealing at 400 °C when the fraction of Ga is ≥29 at. %. In contrast, the enhancement in the orientation of the (222) face and subsequent grain size was observed for the In 1.60 Ga 0.40 O y film with the intermediate Ga fraction of 20 at. %. The suitability as a channel layer was tested on the 10-nm-thick HfO 2 gate oxide where the natural length was designed to meet the requirement of short channel devices with a smaller gate length (<100 nm). The In 1.60 Ga 0.40 O y thin-film transistors (TFTs) exhibited the high field-effect mobility (μ FE ) of 71.27 ± 0.98 cm 2 /(V s), low subthreshold gate swing (SS) of 74.4 mV/decade, threshold voltage (V TH ) of −0.3 V, and I ON/OFF ratio of >10 8 , which would be applicable to the logic devices such as peripheral circuit of heterogeneous DRAM. The in-depth origin for this promising performance was discussed in detail, based on physical, optical, and chemical analysis.

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