P‐10.2: The Influences of PECVD Deposition SiNx on the Thin Film Encapsulation Performance

Abstract

Low‐temperature PECVD technology was used to fabricated inorganic layer in thin film encapsulation for AMOLED display. We systematically obtained SiNx films in different RF power. Stress and refractive index was characterized and analyzed to study the film performance. The results shows that different RF power leads to different film stress, and well‐designed stress‐matched multilayer SiNx will highly improve the TFE reliability. Furthermore, the RA life time (60 °C, 90% RH) of OLED displays with new multilayer SiNx inorganic layer TFE structure has been sharply increased from 240hours to 480hours.

Hydrogen Role on the Properties of Silicon Nitride for Flexible Thin Film Encapsulation

“…[17,18] However, the water-oxygen barrier properties of SiN x largely depend on the density, defects, and the state of residual stress. [16,19] Seong-Keun Cho et al have published a discussion that when the thickness of the SiN x film is increased to more than 400 nm, the performance of water vapor transmission rate DOI: 10.1002/pssa.202300815 High transmittance, high density, and good mechanical properties of silicon nitride (SiN x ) make it a potential candidate for barrier layers of flexible organic light emission diodes (FOLEDs). However, the overall characteristics and water oxygen barrier properties of the films are easily affected by the dangling bonds in the films.…”

“…[ 17,18 ] However, the water‐oxygen barrier properties of SiN x largely depend on the density, defects, and the state of residual stress. [ 16,19 ] Seong‐Keun Cho et al have published a discussion that when the thickness of the SiN x film is increased to more than 400 nm, the performance of water vapor transmission rate (WVTR) is maintained at 0.002 g m −2 day −1 without further improvement. [ 20 ] When films reach critical thicknesses, their barrier properties are limited due to pinholes and stress defects.…”