P‐11: Amorphous In₂O₃‐Ga₂O₃‐ZnO Thin Film Transistors and Integrated Circuits on Flexible and Colorless Polyimide Substrates

Abstract

A process was developed for fine fabrication of amorphous IGZO TFTs and integrated circuits on flexible and colorless polyimide substrates. TFTs with field‐effect mobilities of ∼10 cm2/Vs and ring oscillators with propagation delay of 0.35 μs per stage were achieved on the polyimide substrates.

Fast Flexible Plastic Substrate ZnO Circuits

“…The circuit operates for V DD as small as 2 V and oscillates at slightly more than 2 MHz for a supply voltage of V DD = 18 V, corresponding to a propagation delay of < 20 ns/stage. The peak-to-peak amplitude of oscillation is 2.7 V. To the best of our knowledge, these are the fastest oxidesemiconductor circuits on flexible substrates reported to date and about 20 times faster than the best previous report [10]. The speed on plastic or glass substrates is similar.…”

“…(Bottom right) ZnO TFTs and circuits on a flexible plastic substrate and (left) an optical microscopic image of a single ZnO TFT.Hsieh et al have reported five-stage ring oscillators using amorphous IGZO TFTs on a polyimide substrate with a propagation delay of 350 ns/stage at a supply voltage of 20 V[10]. In this letter, 15-stage ZnO TFT ring oscillators were fabricated on polyimide substrates using plasmaenhanced ALD (PEALD) ZnO films deposited at 200 • C and operated with a propagation delay of < 20 ns/stage for a supply voltage of 18 V.…”

61.1: Invited Paper: ZnO Thin Film Transistors and Circuits on Flexible Polymeric Substrates by Low‐Temperature PEALD

“…The circuit operates for V DD as small as 2 V and oscillates at slightly more than 2 MHz for a supply voltage of V DD = 18 V, corresponding to a propagation delay of <20 nsec/stage. To our best knowledge, these are the fastest oxide-semiconductor circuits on flexible substrates reported to date and more than 20 times faster than the best previous report [6].…”

Active‐matrix organic light‐emitting diode displays with indium gallium zinc oxide thin‐film transistors and normal, inverted, and transparent organic light‐emitting diodes

“…Alternatively, oxide semiconductors composed of heavy-metal cations with a specific electronic configurations have recently been widely investigated due to several merits, such as high mobility, high transparency, low processing temperature, potentially good uniformity, and moderate stability. [4][5][6][7][8][9][10][11] And all these merits make oxide-semiconductor-based TFTs (oxide TFTs) a strong candidate for AMOLED backplanes.…”