P‐11: Carrier Concentration Reduction by Fluorine Doping in P‐Type SnO Thin‐Film Transistors

Wang, Sisi; Lü, Lei; Li, Jiapeng; Xia, Zhihe; Kwok, Hoi Sing; Wong, Man

doi:10.1002/sdtp.13160

Cited by 3 publications

(3 citation statements)

References 11 publications

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“…Wang et al used fluorine doping in SnO TFTs to passivate the defects and significantly reduced the carrier concentration from ≈2 × 10 19 to ≈4.3 × 10 16 cm −3 . [185] Hung et al doped SnO with Y 3+ to suppress the formation of SnO 2 phase in SnO TFTs, decreased I OFF from 2 × 10 −9 to 3 × 10 −12 A μm -1 . [183e] NiO is also the material of interest for p-type TFTs, owing to its better chemical stability compared to Cu 2 O and SnO.…”

Section: P-type Oxide Tfts and Cmos Devicesmentioning

confidence: 99%

Wide Bandgap Oxide Semiconductors: from Materials Physics to Optoelectronic Devices

et al. 2021

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over 80% in the visible light range. [2] ITO is widely used as essential transparent conducting electrodes in flat panel displays, touch screens, and solar cells. The global ITO market has an annual growth rate of 15% and is valued at 7 billion USD in 2019. In 2004, Nomura and Hosono et al. made great breakthrough in oxide thin film transistor (TFT) based on amorphous indium gallium zinc oxide (IGZO) grown at room temperature. [3] The amorphous IGZO showed an impressive mobility of 9 cm 2 V −1 s −1 , about 10 times of amorphous hydrogenated Si TFT which was used exclusively for displays at that time. Soon after Hosono's seminal work, IGZO TFT was commercialized by Sharp Corporation in 2012, and then rapidly expanded to mobile phones, tablets and laptops. [4] In 2019, the fifth generation IGZO TFT went to mass production, capable of driving large-area displays (85 in.) with ultrahigh 8 K resolution. [5] Moreover, oxide TFTs are also considered as the most promising transistors for next-generation curved, flexible, or even rollable electronics. [6] The great success of oxide semiconductors is underpinned by their unique electronic structure, amenability for n-type doping, as well as intrinsic stability. Oxide semiconductors have bandgap larger than 3 eV, enabling transparency in the visible spectrum. The conduction band (CB) of oxide semiconductors is typically composed of empty ns-orbitals (n ≥ 4) of heavy posttransition metals. The large, spherical ns-orbitals give rise to a high electron mobility even in amorphous phases, as well as high dopability for hosting a high density of electrons. Therefore, oxide semiconductors are amendable via doping to be a transparent semiconductor or a transparent conductor, depending on the purposes of device applications, e.g., TFT or ITO. However, there are two sides to every coin. The nature of electronic structure of oxide semiconductors also leads to the fundamental limitation of achieving p-type oxide semiconductors, which is exacerbated by the presence of a high background electron density arising from the formation of unintentional defects and impurities. [1a,7] The lack of p-type semiconductor significantly limits the great potential of oxide electronics. [7b] A high electron density and defect states cause detrimental effects on oxide TFT device performance, such as a high off-current, lower mobility, and instability issues. [8] In the past two decades, considerable research efforts have been made to understand the microscopic origin of defect states and background electrons Wide bandgap oxide semiconductors constitute a unique class of materials that combine properties of electrical conductivity and optical transparency. They are being widely used as key materials in optoelectronic device applications, including flat-panel displays, solar cells, OLED, and emerging flexible and transparent electronics. In this article, an up-to-date review on both the fundamental understanding of materials physics of oxide semiconductors, and recent research progress on design of new...

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Section: P-type Oxide Tfts and Cmos Devicesmentioning

confidence: 99%

Wide Bandgap Oxide Semiconductors: from Materials Physics to Optoelectronic Devices

et al. 2021

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“…Aliovalent doping might be a good way to solve this problem, decreasing carrier concentration and lowering IOFF. For example, Wang et al used fluorine doping in SnO TFTs to passivate the defects, reduced the carrier concentration from ~ 2 × 10 19 cm -3 to ~ 4.3 × 10 16 cm -3 [30].…”

Section: Sno Based Devicesmentioning

confidence: 99%

8‐5: Invited Paper: P‐Type Oxide Semiconductors for Displays: Material Design and Field‐Effect Devices

Shi

Yang

Zhang

2021

Symp Digest of Tech Papers

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“…Normally, color filters are essential for LCD to produce RGB images, but the residual color filter reduces the light transmission efficiency seriously 5,6 . Compared with LCDs with color filters, the field-sequential-color liquid crystal display (FSC LCD) is a promising candidate for next-generation LCD technology since no color filters are required in this structure 7 . This technology takes the advantage of visual persistence effect of the human eye.…”

Section: Introductionmentioning

confidence: 99%

12‐1: High‐resolution Fast Ferroelectric Liquid Crystal Displays on Gen 4.5

YUAN,

ZHAO,

PAN

et al. 2024

Symp Digest of Tech Papers

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A successful test of Ferroelectric Liquid Crystal Displays (FLCD) on Gen 4.5 is realized in this paper. A new polyimide (PI) that can replace Nylon 6 (N6) is synthesized and tested on the production line. This used to be the barrier in the commercialization of FLCD. Apart from that, a new FLC for mass production is synthesized. To investigate the surface energy and relative performance, various materials are compared. This proof of the feasibility on the production line is a significant step towards the commercialization of field‐sequential‐color high‐resolution FLCDs.

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P‐11: Carrier Concentration Reduction by Fluorine Doping in P‐Type SnO Thin‐Film Transistors

Cited by 3 publications

References 11 publications

Wide Bandgap Oxide Semiconductors: from Materials Physics to Optoelectronic Devices

Wide Bandgap Oxide Semiconductors: from Materials Physics to Optoelectronic Devices

8‐5: Invited Paper: P‐Type Oxide Semiconductors for Displays: Material Design and Field‐Effect Devices

12‐1: High‐resolution Fast Ferroelectric Liquid Crystal Displays on Gen 4.5

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