P.14: Distinguished Poster Paper: Separate Extraction Technique for Intrinsic Donor‐ and Acceptor‐like Density‐of‐States over Full‐Energy Range Sub‐Bandgap in Amorphous Oxide Semiconductor Thin Film Transistors by Using One‐Shot Monochromatic Photonic Capacitance‐Voltage Characteristics

Abstract

We report an extraction technique based on experimental data for intrinsic donor-and acceptor-like subgap density-of-states (DOS) over the full-energy range (E C <E<E V ) by using one-shot monochromatic photonic capacitance-voltage (MPCV) characteristics in n-channel a-IGZO TFTs.