P‐153: Field Emission Properties of Dual Emitter in Planar Gate Structure

Abstract

In this paper, we investigated the field emission properties of planar gate structure, which is the gate and cathode electrode (buffer electrode) formed on same face of glass. Emitters and buffer electrodes were formed by screen printing method, which has many advantages in a large size panel. CNT emitter was formed on both buffer electrodes. Bi‐polar pulses were applied to the buffer electrodes and high voltage of DC power was applied to the anode. In case of bi‐polar pulse for planar structure, electron beam spreads more than normal gate structure or diode structure. It noted that increasing emission uniformity at 5 inch panel of dual emitter in planar gate structure. Optimum panel structure could be carried out by the evaluation of field emission properties depending on buffer electrode line width and applied voltage. Finally, we expect that field emission lamp is used LCD‐BLU and general lighting of light source.