P‐21: Post‐Annealing Optimization for Top‐Gate Amorphous In‐Ga‐Zn‐O Thin‐Film Transistors with Atomic‐Layer‐Deposited Ultrathin AlO<sub>x</sub> Dielectric

Li, Jiye; Yang, Huan; Li, Xiao; Zhang, Yuqing; Wang, Xinwei; Lu, Lei; Zhang, Shengdong

doi:10.1002/sdtp.17820

Symp Digest of Tech Papers

2024

DOI: 10.1002/sdtp.17820

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P‐21: Post‐Annealing Optimization for Top‐Gate Amorphous In‐Ga‐Zn‐O Thin‐Film Transistors with Atomic‐Layer‐Deposited Ultrathin AlO_x Dielectric

Jiye Li,

Huan Yang,

Xiao Li

et al.

Abstract: The effects of post‐annealing on amorphous InGaZnO (a‐IGZO) TFTs with ultrathin atomic layer deposited (ALD) AlOxgate insulator (GI) were investigated. The non‐annealed devices exhibited uncontrollable gate leakage current while postannealing in either oxygen (O2) or nitrogen (N2) exhibited noticeable improvements. Optimizing O2‐annealed devices demonstrated the most optimal performance, including a low subthreshold swing of 61.6 mV/dec and a high on/off current ratio over 109. Capacitance‐voltage and X‐ray ph… Show more

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One Micrometer Channel Length, Coplanar Polycrystalline InGaO Thin Film Transistors Exhibiting 85 cm² V⁻¹ s⁻¹ Mobility and Excellent Bias Stabilities by Using Offset Engineering

Rabbi,

Arnob,

Nahar

et al. 2024

Adv Funct Materials

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The effect of N+ resistivity in the offset region, for ≈1 µm channel length coplanar, polycrystalline InGaO (PC‐IGO) thin‐film transistors (TFTs) is studied. The room temperature deposited amorphous IGO is solid phase crystallized at 450 °C. The PC‐IGO TFT exhibits a maximum effective field‐effect mobility (µFE) of ≈86.69 cm2 V−1 s−1, a threshold voltage of ≈1.5 V, and a subthreshold swing of ≈300 mV decade−1, with remarkable stability under bias and temperature stress. The offset length (Loff) is varied from 1 to 3 µm and their electrical performances are analyzed. Upon increasing the Loff from 1 to 3 µm, the on current (Ion) and the µFE drops from 50.31 to 17.72 µA and 85.40 to 67.64 cm2 V−1 s−1, respectively, which can be attributed to a greater voltage drop in the Loff, resulting in the reduction of effective VDS applied to the channel. Technology computer‐aided design simulations shows that at the sheet resistance of 14.5 Ω sq−1. in the N+ offset region, the Ion dependency disappears with the change in Loff, which is attributed to the negligible voltage drop. These results provide valuable insight into optimizing N+ doping, for high‐performance, short‐channel coplanar oxide TFTs.

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One Micrometer Channel Length, Coplanar Polycrystalline InGaO Thin Film Transistors Exhibiting 85 cm² V⁻¹ s⁻¹ Mobility and Excellent Bias Stabilities by Using Offset Engineering

Rabbi,

Arnob,

Nahar

et al. 2024

Adv Funct Materials

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show abstract

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P‐21: Post‐Annealing Optimization for Top‐Gate Amorphous In‐Ga‐Zn‐O Thin‐Film Transistors with Atomic‐Layer‐Deposited Ultrathin AlO_x Dielectric

Cited by 1 publication

References 22 publications

One Micrometer Channel Length, Coplanar Polycrystalline InGaO Thin Film Transistors Exhibiting 85 cm² V⁻¹ s⁻¹ Mobility and Excellent Bias Stabilities by Using Offset Engineering

One Micrometer Channel Length, Coplanar Polycrystalline InGaO Thin Film Transistors Exhibiting 85 cm² V⁻¹ s⁻¹ Mobility and Excellent Bias Stabilities by Using Offset Engineering

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P‐21: Post‐Annealing Optimization for Top‐Gate Amorphous In‐Ga‐Zn‐O Thin‐Film Transistors with Atomic‐Layer‐Deposited Ultrathin AlOx Dielectric

Cited by 1 publication

References 22 publications

One Micrometer Channel Length, Coplanar Polycrystalline InGaO Thin Film Transistors Exhibiting 85 cm2 V−1 s−1 Mobility and Excellent Bias Stabilities by Using Offset Engineering

One Micrometer Channel Length, Coplanar Polycrystalline InGaO Thin Film Transistors Exhibiting 85 cm2 V−1 s−1 Mobility and Excellent Bias Stabilities by Using Offset Engineering

Contact Info

Product

Resources

About

P‐21: Post‐Annealing Optimization for Top‐Gate Amorphous In‐Ga‐Zn‐O Thin‐Film Transistors with Atomic‐Layer‐Deposited Ultrathin AlO_x Dielectric

One Micrometer Channel Length, Coplanar Polycrystalline InGaO Thin Film Transistors Exhibiting 85 cm² V⁻¹ s⁻¹ Mobility and Excellent Bias Stabilities by Using Offset Engineering

One Micrometer Channel Length, Coplanar Polycrystalline InGaO Thin Film Transistors Exhibiting 85 cm² V⁻¹ s⁻¹ Mobility and Excellent Bias Stabilities by Using Offset Engineering