P‐22: Effects of Self‐Assembled Monolayer on Contact Resistance Between IGZO and Electrode for High‐Resolution Display

Abstract

We improved the contact properties by inserting a self‐assembled monolayer at the interface between a‐IGZO and metal electrode. For high‐resolution and high‐speed displays, the transistor channel length needs to be reduced without short channel effects. In case of Al electrode, it easily diffuses into a‐IGZO and forms AlOx at the interface, resulting in a considerable contact resistance increase. In our approach, we successfully suppressed Al diffusion by self‐assembled monolayer treatment on a‐IGZO thin film. The thickness of AlOx was significantly reduced, which was verified by transmission electron microscopy images. With a proper self‐assembled monolayer treatment, the contact resistance was decreased by 36%.

Benzylphosphonic acid treated ultra-thin ALD-InOx for long term device stability

“…[17][18][19] Therefore, the use of SAMs in TFTs has shown great potential for improving stability and reducing device degradation over a prolonged time-lapse. [20][21][22][23][24][25] Although In 2 O 3 TFTs with fine thickness control by atomic layer deposition (ALD) have been studied extensively, research on the longterm V th stability of these devices remains limited. 7,9,10,26,27 Given the practical importance of electrical stability, particularly in light of the potential of In 2 O 3 TFTs to achieve high mobility, in this paper, we show that utilizing PA organic layer passivation improves both the electrical stability and V th values of ultra-thin In 2 O 3 TFTs over time.…”