2015
DOI: 10.1002/sdtp.10063
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P‐26: High Capacity Memory using Oxide Based Schottky Diode and Unipolar Resistive Array

Abstract: The Al-doped Author KeywordsAZTO; Schottky diode; resistive switching; RRAM; read margin. Objective and BackgroundIn recent years, transparent amorphous oxide semiconductors (TAOS) are highly received candidates for large-sized liquid-crystal displays (LCDs) and active-matrix organic light-emitting diode displays (AMOLEDs). It owns lots of desirable features, such as the high optical transparency, low processing temperature and high electron mobility even when it is deposited at room temperature without any… Show more

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