P.5: High Uniformity Solid Phase Crystallized Bridged‐Grain Polycrystalline Silicon Thin Film Transistors

Abstract

Solid phase crystallized poly‐Si TFT with Al2O3 gate dielectric and bridged grain structure is demonstrated. The results show dramatically improved threshold voltage, subthreshold swing and on‐off ratio with very high uniformity. The proposed device is promising for application in AMOLED pixel circuits with simple design and low cost.